Electrical Characterization of 1.2 kV-Class SiC MOSFET at High Temperature up to 380°C

Yuichiro Nanen; Masatoshi Aketa; Yuki Nakano; Hirokazu Asahara; Takashi Nakamura

doi:10.4028/www.scientific.net/MSF.858.885

Paper Titles

Gamma-Ray Irradiation Response of the Motor-Driver Circuit with SiC MOSFETs
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Avalanche Capabilities of Commercial 1200 V 4H-SiC Power MOSFETs
p.872

High Performance 1.2kV-2.5kV 4H-SiC MOSFETs with Excellent Process Capability and Robustness
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Using SiC MOSFET’s Full Potential – Switching Faster than 200 kV/μs
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Electrical Characterization of 1.2 kV-Class SiC MOSFET at High Temperature up to 380°C
p.885

Design and Economic Considerations to Achieve the Price Parity of SiC MOSFETs with Silicon IGBTs
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Readiness of SiC MOSFETs for Aerospace and Industrial Applications
p.894

Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 °C to 500 °C
p.903

Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect
p.908

HomeMaterials Science ForumMaterials Science Forum Vol. 858Electrical Characterization of 1.2 kV-Class SiC...

Electrical Characterization of 1.2 kV-Class SiC MOSFET at High Temperature up to 380°C

Abstract:

Dynamic and static characteristics of SiC power MOSFETs at high temperature up to 380°C were investigated. Investigated devices have exhibited a behavior as a normally-off MOSFET even at such high temperature as 380°C. Temperature dependence of the MOSFET characteristics are reported in this paper, such as threshold voltage (V_TH), on-resistance, internal gate resistance, and turn-on and turn-off losses (E_ON, E_OFF). E_ON decreases and E_OFF increases with increased temperature. Temperature dependence of switching losses is affected by transfer time of V_DS, which was mainly determined from V_TH.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

885-888

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.885

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Online since:

May 2016

Authors:

Yuichiro Nanen*, Masatoshi Aketa, Yuki Nakano, Hirokazu Asahara, Takashi Nakamura

Keywords:

Electrical Characterization, Metal-Oxide-Semiconductor Field-Effect Transistor, MOSFET, Temperature Dependence

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