Avalanche Capabilities of Commercial 1200 V 4H-SiC Power MOSFETs

Christina Di Marino; Brett Hull

doi:10.4028/www.scientific.net/MSF.858.872

Paper Titles

Effect of Electron Irradiation on 1700V 4H-SiC MOSFET Characteristics
p.856

Change in Characteristics of SiC MOSFETs by Gamma-Ray Irradiation at High Temperature
p.860

Characterization of 4H-SiC nMOSFETs in Harsh Environments, High-Temperature and High Gamma-Ray Radiation
p.864

Gamma-Ray Irradiation Response of the Motor-Driver Circuit with SiC MOSFETs
p.868

Avalanche Capabilities of Commercial 1200 V 4H-SiC Power MOSFETs
p.872

High Performance 1.2kV-2.5kV 4H-SiC MOSFETs with Excellent Process Capability and Robustness
p.876

Using SiC MOSFET’s Full Potential – Switching Faster than 200 kV/μs
p.880

Electrical Characterization of 1.2 kV-Class SiC MOSFET at High Temperature up to 380°C
p.885

Design and Economic Considerations to Achieve the Price Parity of SiC MOSFETs with Silicon IGBTs
p.889

HomeMaterials Science ForumMaterials Science Forum Vol. 858Avalanche Capabilities of Commercial 1200 V 4H-SiC...

Avalanche Capabilities of Commercial 1200 V 4H-SiC Power MOSFETs

Abstract:

Avalanche testing is a common method for evaluating the ruggedness of switching devices. Typically, datasheets specify an avalanche rating under a single operating condition. Instead, in this work, 1.2 kV, 24 A SiC MOSFETs are subjected to avalanche events under a variety of conditions. From this testing, a curve is drawn which shows the area for safe avalanche operation. Post-characterization and high temperature reverse bias testing were performed to ensure that the avalanche events did not degrade the device performance or lifetime. CoolMOS devices were also tested for comparison, and, unlike the SiC MOSFETs, the Si devices showed a notable decrease in avalanche capability as the current in avalanche was increased. The SiC MOSFETs were able to endure one hundred single avalanche events at 20 A and 1000 mJ without any sign of lifetime degradation.

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Silicon Carbide and Related Materials 2015

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Periodical:

Materials Science Forum (Volume 858)

Pages:

872-875

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.872

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Online since:

May 2016

Authors:

Christina Di Marino*, Brett Hull

Keywords:

Avalanche, Reliability, Ruggedness, SiC MOSFET, Unclamped Inductive Switching

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