Using SiC MOSFET’s Full Potential – Switching Faster than 200 kV/μs

Otto Kreutzer; Thomas Heckel; Martin Maerz

doi:10.4028/www.scientific.net/MSF.858.880

Paper Titles

Characterization of 4H-SiC nMOSFETs in Harsh Environments, High-Temperature and High Gamma-Ray Radiation
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Gamma-Ray Irradiation Response of the Motor-Driver Circuit with SiC MOSFETs
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Avalanche Capabilities of Commercial 1200 V 4H-SiC Power MOSFETs
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High Performance 1.2kV-2.5kV 4H-SiC MOSFETs with Excellent Process Capability and Robustness
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Using SiC MOSFET’s Full Potential – Switching Faster than 200 kV/μs
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Electrical Characterization of 1.2 kV-Class SiC MOSFET at High Temperature up to 380°C
p.885

Design and Economic Considerations to Achieve the Price Parity of SiC MOSFETs with Silicon IGBTs
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Readiness of SiC MOSFETs for Aerospace and Industrial Applications
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Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 °C to 500 °C
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HomeMaterials Science ForumMaterials Science Forum Vol. 858Using SiC MOSFET’s Full Potential – Switching...

Using SiC MOSFET’s Full Potential – Switching Faster than 200 kV/μs

Abstract:

SiC-MOSFETs are available since several years, but unlike SiC diodes they have not arrived in the mass market yet. The main reason is that the higher costs do not get compensated by the technical advantages in common applications. This lack is not only caused by the SiC-MOSFETs itself, but also by the packaging and the gate drivers. Consequently the main challenge for getting SiC-MOSFETs to a wider acceptance by application engineers is to show how all benefits of the new technology can be used. This paper demonstrates how SiC-MOSFETs can be operated in a standard half bridge application with exceptional switching speeds of less than 4 ns, resulting in slopes of more than 200 kV/μs and lowest possible switching losses. Previous publications have claimed to use “the full potential of the SiC devices for power conversion applications” achieving switching times of 20 ns [1].

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Periodical:

Materials Science Forum (Volume 858)

Pages:

880-884

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.880

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Online since:

May 2016

Authors:

Otto Kreutzer*, Thomas Heckel, Martin Maerz

Keywords:

DC/DC Converter, Gate Drivers, Low Inductive Power Module, MOSFET, Packaging, SiC-MOSFET, Silicon Carbide (SiC), Ultra Fast Switching

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