Readiness of SiC MOSFETs for Aerospace and Industrial Applications

Ljubisa Stevanovic; Peter A. Losee; Stacey Kennerly; Alexander Bolotnikov; Brian Rowden; Joseph Smolenski; Maja Harfman-Todorovic; Rajib Datta; Stephen Arthur; David Lilienfeld; Tobias Schuetz; Fabio Carastro; Feng Feng Tao; David Esler; Ravi Raju; Greg Dunne; Philip Cioffi; Liang Chun Yu

doi:10.4028/www.scientific.net/MSF.858.894

Paper Titles

High Performance 1.2kV-2.5kV 4H-SiC MOSFETs with Excellent Process Capability and Robustness
p.876

Using SiC MOSFET’s Full Potential – Switching Faster than 200 kV/μs
p.880

Electrical Characterization of 1.2 kV-Class SiC MOSFET at High Temperature up to 380°C
p.885

Design and Economic Considerations to Achieve the Price Parity of SiC MOSFETs with Silicon IGBTs
p.889

Readiness of SiC MOSFETs for Aerospace and Industrial Applications
p.894

Experimental and Theoretical Study of 4H-SiC JFET Threshold Voltage Body Bias Effect from 25 °C to 500 °C
p.903

Processing and Prolonged 500 °C Testing of 4H-SiC JFET Integrated Circuits with Two Levels of Metal Interconnect
p.908

Modelling of 4H-SiC VJFETs with Self-Aligned Contacts
p.913

Conduction Loss Reduction for Bipolar Injection Field-Effect-Transistors (BIFET)
p.917

HomeMaterials Science ForumMaterials Science Forum Vol. 858Readiness of SiC MOSFETs for Aerospace and...

Readiness of SiC MOSFETs for Aerospace and Industrial Applications

Abstract:

This paper highlights ongoing efforts to validate performance, reliability and robustness of GE SiC MOSFETs for Aerospace and Industrial applications. After summarizing ruggedness and reliability testing performed on 1.2kV MOSFETs, two application examples are highlighted. The first demonstrates the 1.2kV device performance in a prototype high frequency 75kW Aviation motor drive. The second highlights the experimental demonstration of a 99% efficient 1.0MW solar inverter using 1.7kV MOSFET modules in a two-level topology switching at 8kHz. Both applications illustrate that SiC advantage is not only in improved performance, but also in significant system cost savings through simplifications in topology, controls, cooling and filtering.

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Periodical:

Materials Science Forum (Volume 858)

Pages:

894-899

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.858.894

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Online since:

May 2016

Authors:

Ljubisa Stevanovic*, Peter A. Losee, Stacey Kennerly, Alexander Bolotnikov, Brian Rowden, Joseph Smolenski, Maja Harfman-Todorovic, Rajib Datta, Stephen Arthur, David Lilienfeld, Tobias Schuetz, Fabio Carastro, Feng Feng Tao, David Esler, Ravi Raju, Greg Dunne, Philip Cioffi, Liang Chun Yu

Keywords:

Aerospace, Applications, Efficiency, Industrial, Reliability, Ruggedness, SiC MOSFET

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References

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