650V SiC Cascode: A Breakthrough for Wide-Bandgap Switches

Peter Alexandrov; Anup Bhalla; Zhong Da Li; Xue Qing Li; John Bendel; Jonathan Dodge

doi:10.4028/www.scientific.net/MSF.897.673

Paper Titles

Challenges on Drive Circuit Design for Series-Connected SiC Power Transistors
p.655

Monolithically Integrated Solid-State-Circuit-Breaker for High Power Applications
p.661

Experimental Verification of a Self-Triggered Solid-State Circuit Breaker Based on a SiC BIFET
p.665

4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics
p.669

650V SiC Cascode: A Breakthrough for Wide-Bandgap Switches
p.673

A Built-In High Temperature Half-Bridge Power Module with Low Stray Inductance and Low Thermal Resistance for In-Wheel Motor Application
p.677

High Temperature Bipolar Master-Slave Comparator and Frequency Divider in 4H-SiC Technology
p.681

High Frequency Power Supply with 3.3 kV SiC-MOSFETs for Accelerator Application
p.685

Switching SiC Devices Faster and More Efficient Using a DBC Mounted Terminal Decoupling Si-RC Element
p.689

HomeMaterials Science ForumMaterials Science Forum Vol. 897650V SiC Cascode: A Breakthrough for Wide-Bandgap...

650V SiC Cascode: A Breakthrough for Wide-Bandgap Switches

Abstract:

We present a SiC Trench JFET technology that achieves a record setting specific on-resistance (R_DSA) of 0.75mohm.cm². These SiC devices are combined with optimized low voltage MOSFETs to form co-packaged cascode transistors, which provide unprecedented performance benefits, with a clear path to direct cost parity with silicon superjunction devices. These devices are shown to be useful for all circuit topologies..

You might also be interested in these eBooks

Silicon Carbide and Related Materials 2016

View Preview

Info:

Periodical:

Materials Science Forum (Volume 897)

Pages:

673-676

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.673

Citation:

Cite this paper

Online since:

May 2017

Authors:

Peter Alexandrov*, Anup Bhalla, Zhong Da Li, Xue Qing Li, John Bendel, Jonathan Dodge

Keywords:

Cascode Switch, Junction Field-Effect Transistor (JFET), Silicon Carbide (SiC)

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

* - Corresponding Author

References

[1] A. Bhalla, Market Penetration of Wide-Bandgap SiC and GaN technology in light of Silicon Superjunction and IGBT technology evolution, CS MANTECH Conference, May 19th - 22nd, (2014).

Google Scholar

[2] Infineon Product Brief, New 650V CoolMOS™ C7 Series, Available from http: /www. infineon. com.

Google Scholar

[3] Top-side cooled 650 V E-mode GaN transistor GS66508T Preliminary Datasheet, Available from http: /www. gansystems. com.

Google Scholar

[4] PGA26E08BV GaN Power Devices, Available from http: /www. semicon. panasonic. co. jp.

Google Scholar

[5] TPH3205WS GaN Power Low-loss Switch Datasheet, Available from http: /www. transphormusa. com.

Google Scholar

[6] xJ SiC Series 45mOhm - 650V SiC Cascode UJC06505K Datasheet, Available from http: /unitedsic. com.

Google Scholar

[7] SCT2120AF Datasheet, Rohm Semiconductor, Available from http: /www. rohm. com.

Google Scholar