High Temperature Bipolar Master-Slave Comparator and Frequency Divider in 4H-SiC Technology

Raheleh Hedayati; Luigia Lanni; Muhammad Shakir; Arash Salemi; Carl Mikael Zetterling

doi:10.4028/www.scientific.net/MSF.897.681

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HomeMaterials Science ForumMaterials Science Forum Vol. 897High Temperature Bipolar Master-Slave Comparator...

High Temperature Bipolar Master-Slave Comparator and Frequency Divider in 4H-SiC Technology

Abstract:

This paper demonstrates a fully integrated master-slave emitter-coupled logic (ECL) comparator and a frequency divider implemented in 4H-SiC bipolar technology. The comparator consists of two latch stages, two level shifters and an output buffer stage. The circuits have been tested up to 500 °C. The single ended output swing of the comparator is -7.73 V at 25 °C and -7.63 V at 500 °C with a -15 V supply voltage. The comparator consumes 585 mW at 25 °C. The frequency divider consisting of two latches shows a relatively constant output voltage swing over the wide temperature range. The output voltage swing is 7.62 V at 25 °C and 7.32 V at 500 °C.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

681-684

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.681

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Online since:

May 2017

Authors:

Raheleh Hedayati*, Luigia Lanni, Muhammad Shakir, Arash Salemi, Carl Mikael Zetterling

Keywords:

Bipolar Comparators, Bipolar Junction Transistor (BJT), Frequency Divider, High Temperature Integrated Circuit (IC), Master-Slave Latched Comparator, Silicon Carbide (SiC)

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References

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