Switching Analysis for All-SiC Module

Shinji Sato; Hidekazu Tanisawa; Kenichi Koui; Hiroki Takahashi; Yoshinori Murakami; Fumiki Kato; Kinuyo Watanabe; Hiroshi Sato

doi:10.4028/www.scientific.net/MSF.897.693

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HomeMaterials Science ForumMaterials Science Forum Vol. 897Switching Analysis for All-SiC Module

Switching Analysis for All-SiC Module

Abstract:

In this paper, we propose a method to accurately calculate the turn-off switching loss. For that purpose, a simple analytical model is proposed in which the parasitic capacitances and stray inductances are integrated within the power module. Experiment confirmed that the turn-off loss analyzed by this model is correct.

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Silicon Carbide and Related Materials 2016

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Periodical:

Materials Science Forum (Volume 897)

Pages:

693-696

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.693

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Online since:

May 2017

Authors:

Shinji Sato*, Hidekazu Tanisawa, Kenichi Koui, Hiroki Takahashi, Yoshinori Murakami, Fumiki Kato, Kinuyo Watanabe, Hiroshi Sato

Keywords:

Device Model, Power Module, Switching Simulation

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* - Corresponding Author

References

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