SiC Power Devices in Impedance Source Converters

Jacek Rabkowski

doi:10.4028/www.scientific.net/MSF.897.701

Paper Titles

High Frequency Power Supply with 3.3 kV SiC-MOSFETs for Accelerator Application
p.685

Switching SiC Devices Faster and More Efficient Using a DBC Mounted Terminal Decoupling Si-RC Element
p.689

Switching Analysis for All-SiC Module
p.693

SiC Schottky Diode Rectifier Bridge Represented as Diffusion-Welded Stack
p.697

SiC Power Devices in Impedance Source Converters
p.701

Dislocation Revelation and Categorization for Thick Free-Standing GaN Substrates Grown by HVPE
p.707

Thermal and Lattice Misfit Stress Relaxation in Growing AlN Crystal with Simultaneous Evaporation of SiC Substrate
p.711

Thermo-Mechanical Reliability and Performance Degradation of a Lead-Free RF Power Amplifier with Gan-on-SiC Hemts
p.715

Prediction of High-Density and High-Mobility Two-Dimensional Electron Gas at Al_xGa_1-xN/4H-SiC Interface
p.719

HomeMaterials Science ForumMaterials Science Forum Vol. 897SiC Power Devices in Impedance Source Converters

SiC Power Devices in Impedance Source Converters

Abstract:

This paper discusses issues related to application of SiC power devices to new family of power converters. Impedance source converters show unique feature, buck boost characteristics due to specific impedance network. Passive elements of this network may be seriously reduced with the switching frequency increase, possible with fast-switching SiC transistors. On the other hand, switching conditions of the power devices are more severe than in traditional voltage-source or current-source converters. These issues are discussed on the base of the 6kVA/100kHz quasi-Z-source inverter example.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

701-704

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.701

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Online since:

May 2017

Authors:

Jacek Rabkowski*

Keywords:

Impedance Source Converters, Parasitic Capacitance, Power Converters, SiC MOSFET

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References

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