SiC Schottky Diode Rectifier Bridge Represented as Diffusion-Welded Stack

Oleg Korolkov; Vitalii V. Kozlovski; Alexander A. Lebedev; Raul Land; Natalja Sleptsuk; Jana Toompuu; Toomas Rang

doi:10.4028/www.scientific.net/MSF.897.697

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HomeMaterials Science ForumMaterials Science Forum Vol. 897SiC Schottky Diode Rectifier Bridge Represented as...

SiC Schottky Diode Rectifier Bridge Represented as Diffusion-Welded Stack

Abstract:

We considered the prototype of a SiC Schottky diode Rectifier Bridge made on the basis of commercial SiC Schottky diodes by diffusion welding (DW). Vertical integration for four diode chips in combination with molybdenum electrodes can improve the overall weight and dimensions of the module performance and increase device durability to radiation exposure. Our DW prototype, in contrast to commercial bridges, completely preserved the initial characteristics after irradiation by electrons with an energy of 0.9 MeV and density of 3 x 10¹⁶ cm^-2

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Periodical:

Materials Science Forum (Volume 897)

Pages:

697-700

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.697

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Online since:

May 2017

Authors:

Oleg Korolkov*, Vitalii V. Kozlovski, Alexander A. Lebedev, Raul Land, Natalja Sleptsuk, Jana Toompuu, Toomas Rang

Keywords:

Diffusion Welded Stacks, Modular Compositions, Schottky Diodes, Vertical Integration

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