Thermo-Mechanical Reliability and Performance Degradation of a Lead-Free RF Power Amplifier with Gan-on-SiC Hemts

J. Lang; Ilia Belov; Johan Hellen; Jang Kwon Lim; Bo Schodt; Torbjorn Nilsson; Ralf Poder; Mietek Bakowski; Peter Leisner

doi:10.4028/www.scientific.net/MSF.897.715

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Thermo-Mechanical Reliability and Performance Degradation of a Lead-Free RF Power Amplifier with Gan-on-SiC Hemts
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HomeMaterials Science ForumMaterials Science Forum Vol. 897Thermo-Mechanical Reliability and Performance...

Thermo-Mechanical Reliability and Performance Degradation of a Lead-Free RF Power Amplifier with Gan-on-SiC Hemts

Abstract:

RF power amplifier demonstrators containing each one GaN-on-SiC, HEMT, CHZ015A-QEG, from UMS in SMD quad-flat no-leads package (QFN) were subjected to thermal cycles (TC) and power cycles (PC) followed by electrical, thermal and structural evaluation. Two types of solders i.e. Sn₆₃Pb₃₆Ag₂ and lead-free SnAgCu (SAC305) and two types of TIM materials (NanoTIM and Tgon^TM 805) for PCB attachment to liquid cold plate were tested for thermo-mechanical reliability. Changes in electrical performance of the devices namely reduction of the current saturation value, threshold voltage shift, increase of the leakage current and degradation of the HF performance were observed as a result of an accumulated current stress during PC. No significant changes in the investigated solder or TIM materials were observed.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

715-718

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.715

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Online since:

May 2017

Authors:

J. Lang, Ilia Belov, Johan Hellen, Jang Kwon Lim*, Bo Schodt, Torbjorn Nilsson, Ralf Poder, Mietek Bakowski, Peter Leisner

Keywords:

GaN (Gallium Nitride), HEMT (High-Electron-Mobility Transistor), PC (Power Cycle), Reliability, RF (Radio Frequency) Power Amplifier, Silicon Carbide (SiC), TC (Thermal Cycle)

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