High Temperature Grown Graphene on SiC Studied by Raman and FTIR Spectroscopy

Article Preview

Abstract:

Epitaxial graphene on semiinsulating silicon carbide was grown using a high temperature method at atmospheric pressure in argon atmosphere. The temperature dependence of the layer quality was analysed using Raman and infrared spectroscopy. It is demonstrated that infrared spectroscopy can be used as a versatile tool to access the layer count and the quality of the epitaxial grown graphene on silicon carbide. The results obtained by infrared spectroscopy correlate with the Raman measurements.

You might also be interested in these eBooks

Info:

Periodical:

Pages:

727-730

Citation:

Online since:

May 2017

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2017 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] A.C. Ferrari, J.C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K.S. Novoselov, S. Roth, A. K. Geim, Phys. Rev. Lett. 97 (2006) 187401.

DOI: 10.1103/physrevlett.97.187401

Google Scholar

[2] A. Das, S. Pisana, B. Chakraborty, S. Piscanec, S. K. Saha, U. V. Waghmare, K.S. Novoselov, H.R. Krishnamurthy, A.K. Geim, A. C. Ferrari, A. K. Sood, Nature Nanotechnology 3 (2008) 210-215.

DOI: 10.1038/nnano.2008.67

Google Scholar

[3] I.G. Ivanov, J.U. Hassan, T. Iakimov, A.A. Zakharov, R. Yakimova, E. Janzen, Carbon 77 (2014) 492-500.

Google Scholar

[4] A. Boosalis, T. Hofmann, V. Darakchieva, R. Yakimova, M. Schubert, Appl. Phys. Lett. 101 (2012) 011912.

Google Scholar

[5] B. K. Daas, K. M. Daniels, T. S. Sudarshan, M. V. S. Chandrashekhar, J. Appl. Phys. 110 (2011) 113114.

Google Scholar

[6] C.N. Santos, F. Joucken, D. S. Meneses, P. Echegut, J. Campos-Delgado, P. Louette, J. P. Raskin, B. Hackens, Sci. Rep. 6 (2016) 24301.

DOI: 10.1038/srep24301

Google Scholar

[7] R. Göckeritz, D. Schmidt, M. Beleites, G. Seifert, S. Krischok, M. Himmerlich, J. Pezoldt, Mater. Sci. Forum 679-680 (2011) 785-788.

DOI: 10.4028/www.scientific.net/msf.679-680.785

Google Scholar

[8] J. M. Dawlaty, S. Shivaraman, J. Strait, P. George, M. Chandrashekhar, F. Rana, M. G. Spencer, D. Veksler, Y. Chen, Appl. Phys. Lett. 93 (2008) 131905.

DOI: 10.1063/1.2990753

Google Scholar

[9] V. P. Gusynin, S. G. Sharapov, J. P. Carbotte, Phys. Rev. Lett. 96 (2006) 256802.

Google Scholar

[10] T. Stauber, N. M. R. Peres, A. K. Geim, Phys. Rev. B 78 (2008) 085432.

Google Scholar

[11] D. Korobkin, Y. Urzhumov, G. Shvets, J. Opt. Soc. Am. B 23 (2006) 468-478.

Google Scholar

[12] S. Lin, Z. Chen, L. Li, C. Yang, Mat. Res. 15 (2012) 833-836.

Google Scholar

[13] L. Patrick, W.J. Choyke, Phys. Rev. 123 (1961) 813-815.

Google Scholar