High Temperature Reliability Assessment and Degradation Analysis for Diamond Semiconductor Devices

Satoshi Tanimoto; Tatsuhiro Suzuki; Sawa Araki; Toshiharu Makino; Hiromitsu Kato; Masahiko Ogura; Satoshi Yamasaki

doi:10.4028/www.scientific.net/MSF.897.743

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HomeMaterials Science ForumMaterials Science Forum Vol. 897High Temperature Reliability Assessment and...

High Temperature Reliability Assessment and Degradation Analysis for Diamond Semiconductor Devices

Abstract:

The long-term reliability of Schottky pn diodes (SPNDs) on diamond having widely used Ti/Pt/Au electrodes was investigated at 500°C in order to identify degradation phenomena at higher temperatures. A vital degradation event was observed after the passage of about 100 hours in that both forward and reverse currents were progressively reduced. AES depth profiling and X-STEM-EELS analyses revealed that this occurred because the Ti contact material changed to insulating (or semiconductive) TiO₂, causing large series resistance.

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Materials Science Forum (Volume 897)

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743-746

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.743

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Online since:

May 2017

Authors:

Satoshi Tanimoto*, Tatsuhiro Suzuki, Sawa Araki, Toshiharu Makino, Hiromitsu Kato, Masahiko Ogura, Satoshi Yamasaki

Keywords:

Degradation, Diamond, Diode, High Temperature, Leakage Current, SPND, Ti/Pt/Au

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