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High Temperature Reliability Assessment and Degradation Analysis for Diamond Semiconductor Devices

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Abstract:

The long-term reliability of Schottky pn diodes (SPNDs) on diamond having widely used Ti/Pt/Au electrodes was investigated at 500°C in order to identify degradation phenomena at higher temperatures. A vital degradation event was observed after the passage of about 100 hours in that both forward and reverse currents were progressively reduced. AES depth profiling and X-STEM-EELS analyses revealed that this occurred because the Ti contact material changed to insulating (or semiconductive) TiO2, causing large series resistance.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

743-746

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.743

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Online since:

May 2017

Authors:

Satoshi Tanimoto*, Tatsuhiro Suzuki, Sawa Araki, Toshiharu Makino, Hiromitsu Kato, Masahiko Ogura, Satoshi Yamasaki

Keywords:

Degradation, Diamond, Diode, High Temperature, Leakage Current, SPND, Ti/Pt/Au

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© 2017 Trans Tech Publications Ltd. All Rights Reserved

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References

[1] J. E. Field (Ed. ), The Properties of Natural and Synthetic Diamond, Academic Press Ltd., London, (1992).

Google Scholar

[2] T. H. Borst, S. Strobel, O. Weis, High-temperature diamond p-n junction: B-doped homoepitaxial layer on N-doped substrate, Appl. Phys. Lett. 67 (1995) 2651-2653.

DOI: 10.1063/1.114325

Google Scholar

[3] T. Makino, H. Kato, M. Ogura, H. Watanabe, S. -G. Ri, Y.G. Chen, S. Yamasaki, H. Okushi, Electrical and optical characterizations of (001)-oriented homoepitaxial diamond p–n junction, Diamond & Related Materials 15 (2006) 513-516.

DOI: 10.1016/j.diamond.2005.11.021

Google Scholar

[4] T. Makino, S. Tanimoto, Y. Hayashi, H. Kato, N. Tokuda, M. Ogura, D. Takeuchi, K. Oyama, H. Ohashi, H. Okushi, S. Yamasaki, Diamond Schottky-pn diode with high forward current density and fast switching operation, Appl. Phys. Lett. 94 (2009).

DOI: 10.1063/1.3159837

Google Scholar

[5] S. Tanimoto, N. Kiritani, T. Makino, M. Ogura, N. Tokuda, H. Kato, S. Yamasaki, H. Okushi, Reliability Issues for Diamond Electron Devices Operated at High Temperature, Extended Abstracts, 27 p-K-13, JAPS Spring Meeting (Funabashi, Chiba, Japan), March 27th, (2018).

Google Scholar

[6] H.A. Hoff, G.L. Waytena, C.L. Vold, J.S. Suehle, I.P. Isaacson, M.L. Rebbert, D.I. Ma, K. Harris, Ohmic contacts to semiconducting diamond using a Ti/Pt/Au trilayer metallization scheme, Diamond & Related Materials 5 (1996) 1450-1456.

DOI: 10.1016/s0925-9635(96)00566-3

Google Scholar

[7] Y. Hoshino, Y. Saito, J. Nakata, Interdiffusion Analysis of Au/Ti and Au/Pt/Ti Electrode Structures Grown on Diamond (001) Surface by Rutherford Backscattering Spectroscopy, Jpn. J. Appl. Phys. 49 (2010) 101362.

DOI: 10.1143/jjap.49.101302

Google Scholar