Nanostructuring of Graphene on Semi-Insulating SiC

Bernd Hähnlein; Manuela Breiter; Thomas Stauden; Jörg Pezoldt

doi:10.4028/www.scientific.net/MSF.897.735

Paper Titles

Prediction of High-Density and High-Mobility Two-Dimensional Electron Gas at Al_xGa_1-xN/4H-SiC Interface
p.719

Investigation of Direct Water Photoelectrolysis Process Using III-N Structures
p.723

High Temperature Grown Graphene on SiC Studied by Raman and FTIR Spectroscopy
p.727

CVD Growth of Graphene on SiC (0001): Influence of Substrate Offcut
p.731

Nanostructuring of Graphene on Semi-Insulating SiC
p.735

Realization and Characterization of Carbonic Layers on 4H-SiC for Electrochemical Detections
p.739

High Temperature Reliability Assessment and Degradation Analysis for Diamond Semiconductor Devices
p.743

The Effect of Interfacial Charge on the Development of Wafer Bonded Silicon-on-Silicon-Carbide Power Devices
p.747

Numerical Study of Energy Capability of Si/SiC LDMOSFETs
p.751

HomeMaterials Science ForumMaterials Science Forum Vol. 897Nanostructuring of Graphene on Semi-Insulating SiC

Nanostructuring of Graphene on Semi-Insulating SiC

Abstract:

Epitaxial graphene nanoribbons were fabricated and geometrically measured via scanning electron microscope in the width range of 3...45nm in a new approach. The critical dimension measurement was improved using Monte Carlo simulations for analyzing back scattering effects of the semi-insulating substrate and gaussian convolutions. Different bias powers during oxygen plasma etching allowed the identification of under-etching depths.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

735-738

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.735

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Online since:

May 2017

Authors:

Bernd Hähnlein, Manuela Breiter, Thomas Stauden, Jörg Pezoldt*

Keywords:

Etching, Graphene, Nanoribbon, Resolution Limit, Structuring

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