Prediction of High-Density and High-Mobility Two-Dimensional Electron Gas at AlxGa1-xN/4H-SiC Interface

Zhan Wei Shen; Feng Zhang; Sima Dimitrijev; Ji Sheng Han; Li Xin Tian; Guo Guo Yan; Zheng Xin Wen; Wan Shun Zhao; Lei Wang; Xing Fang Liu; Guo Sheng Sun; Yi Ping Zeng

doi:10.4028/www.scientific.net/MSF.897.719

Paper Titles

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Thermal and Lattice Misfit Stress Relaxation in Growing AlN Crystal with Simultaneous Evaporation of SiC Substrate
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Thermo-Mechanical Reliability and Performance Degradation of a Lead-Free RF Power Amplifier with Gan-on-SiC Hemts
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Prediction of High-Density and High-Mobility Two-Dimensional Electron Gas at Al_xGa_1-xN/4H-SiC Interface
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Investigation of Direct Water Photoelectrolysis Process Using III-N Structures
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High Temperature Grown Graphene on SiC Studied by Raman and FTIR Spectroscopy
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CVD Growth of Graphene on SiC (0001): Influence of Substrate Offcut
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Nanostructuring of Graphene on Semi-Insulating SiC
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HomeMaterials Science ForumMaterials Science Forum Vol. 897Prediction of High-Density and High-Mobility...

Prediction of High-Density and High-Mobility Two-Dimensional Electron Gas at Al_xGa_1-xN/4H-SiC Interface

Abstract:

This work presents theoretical demonstration of two-dimensional electron gas (2DEG) at the interface between Al_0.2Ga_0.8N and 4H-SiC, based on the self-consistent solution of Schrödinger–Poisson equations. High sheet carrier density of 1.1×10¹³cm^-2 was obtained in the Al_0.2Ga_0.8N/4H-SiC heterostructure, which is comparable to the electron concentration in Al_0.2Ga_0.8N/GaN heterostructure. The current–voltage characteristics of a high-electron-mobility transistor (HEMT), based on the Al_0.2Ga_0.8N/4H-SiC heterostructure, show a saturated drain current of 1.5 A/mm at the gate voltage of 2 V and the transconductance of 194 mS/mm at -3.95 V. In spite of interface-roughness scattering and phonon scattering, the 2DEG at the Al_xGa_1-xN/4H-SiC interface exhibits high electron mobility values of 3365 cm²/ (V·s) at 77K and 1120 cm²/ (V·s) at 300K. These results indicate that Al_xGa_1-xN/4H-SiC heterostructure can significantly improve the mobility of SiC based power switching devices.