Dislocation Revelation and Categorization for Thick Free-Standing GaN Substrates Grown by HVPE

Yong Zhao Yao; Yukari Ishikawa; Yoshihiro Sugawara; Daisaku Yokoe; Masaki Sudo; N. Okada; K. Tadatomo

doi:10.4028/www.scientific.net/MSF.897.707

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HomeMaterials Science ForumMaterials Science Forum Vol. 897Dislocation Revelation and Categorization for...

Dislocation Revelation and Categorization for Thick Free-Standing GaN Substrates Grown by HVPE

Abstract:

Threading dislocations (TDs) in an HVPE-grown free-standing GaN substrate have been studied by means of etch pit method using molten KOH+Na₂O₂ solution, cathodoluminescence (CL) mapping and transmission electron microscopy (TEM). We have focused on the correlation between (1) Burgers vectors of TDs, (2) their appearances as dark spots in CL image, and (3) geometries of corresponding etch pits. Based on the above results, dislocation categorization for GaN by using etch pits or CL is discussed.

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Materials Science Forum (Volume 897)

Pages:

707-710

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.707

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Online since:

May 2017

Authors:

Yong Zhao Yao*, Yukari Ishikawa, Yoshihiro Sugawara, Daisaku Yokoe, Masaki Sudo, N. Okada, K. Tadatomo

Keywords:

Burgers Vector, Cathodoluminescence (CL), Dislocation, Etch Pit, HVPE GaN, Large-Angle Convergent-Beam Electron Diffraction (LACBED)

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References

[1] I.C. Kizilyalli, A.P. Edwards, O. Aktas, T. Prunty, and D. Bour, IEEE Trans. Electron Dev., 62 (2015 ) 414.

Google Scholar

[2] T. Kachi and T. Uesugi, Sensor Mater., 25 (2013) 219.

Google Scholar

[3] L. Lu, Z.Y. Gao, B. Shen, F.J. Xu, S. Huang, Z.L. Miao, Y. Hao, Z.J. Yang, G.Y. Zhang, X.P. Zhang, J. Xu and D.P. Yu, J. Appl. Phys., 104 (2008) 123525.

Google Scholar

[4] K. Shiojima, J. Vac. Sci. Technol. B, 18 (2000) 37.

Google Scholar

[5] J.L. Weyher, L. Macht, G. Kamler, J. Borysiuk and I. Grzegory, Phys. Status Solidi C, 0 (2003) 821.

DOI: 10.1002/pssc.200306248

Google Scholar

[6] J.L. Weyher, Superlattice Microst., 40 (2006) 279.

Google Scholar

[7] J.L. Weyher, B. Lucznik, I. Grzegory, J. Smalc-Koziorowska and T. Paskova, J. Cryst. Growth, 312 (2010) 2611.

DOI: 10.1016/j.jcrysgro.2010.04.021

Google Scholar

[8] P. Visconti, K.M. Jones, M.A. Reshchikov, R. Cingolani, H. Morkoc and R.J. Molnar, Appl. Phys. Lett., 77 (2000) 3532.

Google Scholar

[9] S.K. Hong, T. Yao, B.J. Kim, S.Y. Yoon and T.I. Kim, Appl. Phys. Lett., 77 (2000) 82.

Google Scholar

[10] K. Yamane, M. Ueno, H. Furuya, N. Okada and K. Tadatomo, J. Cryst. Growth, 358 (2012) 1.

Google Scholar

[11] Y. Yao, Y. Ishikawa, Y. Sugawara, H. Saitoh, K. Danno, H. Suzuki, Y. Kawai and N. Shibata, Jpn. J. Appl. Phys., 50 (2011) 075502.

DOI: 10.1143/jjap.50.075502

Google Scholar

[12] Y. Yao, Y. Ishikawa, Y. Sugawara, D. Yokoe, M. Sudo, N. Okada, K. Tadatomo, Superlattices and Microstructures, in press (2016).

DOI: 10.1016/j.spmi.2016.05.002

Google Scholar