Switching SiC Devices Faster and More Efficient Using a DBC Mounted Terminal Decoupling Si-RC Element

Abstract:

Large power modules include several parallel mounted chips per switch to raise active area and current. By the electro-mechanical connection interface, the resulting large parasitic inductance is a huge problem especially for very fast switching SiC devices. This challenge is handled by many approaches, but these recent developments require additional development effort along all aspects of the power module, e.g. smart DBC layout, low inductive top side metallization, special terminal designs or additional pins. In this paper we demonstrate an approach to enable excellent switching performance with con-ventional power module technologies: By using a recently developed monolithic silicon RC (Si-RC) element to decouple the bus bar, this problem can be solved in a very efficient way. The Si-RC element is assembled directly adjacent to the power switches on the DBC. This allows a significant reduction of the SiC chip area by minimizing the power losses caused by the switching transients from the parasitic DC-link and module inductances.

• Periodical: Materials Science Forum (Volume 897)
• Pages: 689-692
• DOI: https://doi.org/10.4028/www.scientific.net/MSF.897.689
• Online since: May 2017
• Authors: Stefan Matlok*, Tobias Erlbacher, Florian Krach, Bernd Eckardt
• Keywords: Dynamic Switching Losses, SiC Power Modules, Silicon RC Snubber

References

[1] Wolfspeed Inc., Design Considerations for Designing with Cree SiC Modules Part 1. Understanding the Effects of Parasitic Inductance, PWR-AN12, REV A, www. wolfspeed. de 04. (2016).

[2] M. Frisch and T. Ernö, Power module with additional low inductive current path, 2010 6th International Conference on Integrated Power Electronics Systems (CIPS), 2010, p.1–6.

[3] T. Stockmeier, P. Beckedahl; C. Gobl, T. Malzer: SKiN: Double side sintering technology for new packages. In: IC's (ISPSD). San Diego, CA, USA, S. 324–327.

DOI: 10.1109/ispsd.2011.5890856

[4] F. Krach,N. Thielen, T. Heckel A.J. Bauer, T. Erlbacher, L. Frey, Silicon integrated RC-snubbers with high manufacturability for operation up to 900V, Dev. Res. Conf., 19. -22. 06. (2016).

DOI: 10.1109/drc.2016.7548452

[5] F. Krach, T. Heckel, L. Frey, A.J. Bauer, T. Erlbacher, M. März: Innovative monolithic RC-snubber for fast switching power modules, Proc. 9th Internat. Conf. Integr. Power Electronics Sys. (CIPS) 2016, Nuremberg, Germany, 08. -10. Mar 2016, in press.

[6] T. Erlbacher T., H. Schwarzmann, F. Krach, A.J. Bauer, S.E. Berberich, I. Kasko, L. Frey: Reliability of monolithic RC-snubbers in MOS-based power modules, Proceedings of the 5th Electronics System-Integration Technology Conference 2014, Helsinki, Finland, 16. -18. Sep (2014).

DOI: 10.1109/estc.2014.6962794

[7] F. Krach, H. Schwarzmann, A.J. Bauer, T. Erlbacher, L. Frey, Silicon nitride, a high potential dielectric for 600V integrated RC-snubber applications, J. Vac. Sci. Technol. B 33 (2015) 01A112.

DOI: 10.1116/1.4906082