High Frequency Power Supply with 3.3 kV SiC-MOSFETs for Accelerator Application

Katsuya Okamura; Ken Takayama

doi:10.4028/www.scientific.net/MSF.897.685

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HomeMaterials Science ForumMaterials Science Forum Vol. 897High Frequency Power Supply with 3.3 kV...

High Frequency Power Supply with 3.3 kV SiC-MOSFETs for Accelerator Application

Abstract:

Pulse switching characteristics of newly developed 3.3 kV SiC-MOSFET were investigated and they were provided for a prototype switching power supply (SPS). With supply voltage of 2.5 kV and the load resistor of 100 Ω, rise time T_r and fall time T_f were 76 ns and 88 ns respectively. The SPS exhibited a successful 2.5 kV-20 A-1 MHz burst mode operation.

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Periodical:

Materials Science Forum (Volume 897)

Pages:

685-688

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.685

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Online since:

May 2017

Authors:

Katsuya Okamura*, Ken Takayama

Keywords:

High Repetition, Induction Accelerator, MOSFET, Pulsed Power Supply

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References

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