Bulk β-Ga2O3 with (010) and (201) Surface Orientation: Schottky Contacts and Point Defects

Mads E. Ingebrigtsen; Lasse Vines; Giovanni Alfieri; Andrei Mihaila; Uwe Badstübner; Bengt Gunnar Svensson; Andrej Kuznetsov

doi:10.4028/www.scientific.net/MSF.897.755

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Bulk β-Ga₂O₃ with (010) and (201) Surface Orientation: Schottky Contacts and Point Defects
p.755

HomeMaterials Science ForumMaterials Science Forum Vol. 897Bulk β-Ga2O3 with (010) and (201) Surface...

Bulk β-Ga₂O₃ with (010) and (201) Surface Orientation: Schottky Contacts and Point Defects

Abstract:

Electrical properties of Schottky contacts of high work-function metals (Pd, Au, and Ni) on (010) and (201) oriented β-Ga₂O₃ were investigated. Current-voltage characteristics reveal that all the contacts exhibit high rectifying behavior with ideality factors as low as 1.04. However, the reverse leakage currents were lower in the (010) samples compared to the (201) ones. Thermal admittance spectroscopy confirms a main charge carrier level to be at ~0.15 eV below the conduction band edge (E_c). Secondary ion mass spectrometry indicates that Si may be responsible for this donor level. Deep level transient spectroscopy reveals four levels (E1-E4) in the upper part of the band gap, with the corresponding energy level positions at 0.56, 0.76, 1.01, and 1.48 eV below E_c.

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Materials Science Forum (Volume 897)

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755-758

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.897.755

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Online since:

May 2017

Authors:

Mads E. Ingebrigtsen*, Lasse Vines, Giovanni Alfieri, Andrei Mihaila, Uwe Badstübner, Bengt Gunnar Svensson, Andrej Kuznetsov

Keywords:

Current-Voltage, Deep Level Transient Spectroscopy (DLTS), Defects, Schottky Contacts, Secondary Ion Mas Spectrometry (SIMS), Thermal Admittance Spectroscopy, β-Ga₂O₃

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