Effect of Ion Implantation-Induced Defects on Leakage Current Characteristics of IEMOS
p.353
p.353
Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET
p.357
p.357
Influence of Lateral Straggling of Implated Aluminum Ions on High Voltage 4H-SiC Device Edge Termination Design
p.361
p.361
Investigation of Forward Voltage Degradation due to Process-Induced Defects in 4H-SiC MOSFET
p.365
p.365
4H-Silicon Carbide Wafer Surface after Chlorine Trifluoride Gas Etching
p.369
p.369
Surface Erosion of Ion-Implanted 4H-SiC during Annealing with Carbon Cap
p.373
p.373
Study of Ti/Al/Ni Ohmic Contacts to p-Type Implanted 4H-SiC
p.377
p.377
Pt:Ti Diffusion Barrier, Interconnect, and Simultaneous Ohmic Contacts to n- and p-Type 4H-SiC
p.381
p.381
Ni-Al-Ti Ohmic Contacts with Preserved Form Factor and Few 10- 4 Ωcm2 Specific Resistance on 0.1-1 Ωcm p-Type 4H-SiC
p.385
p.385
4H-Silicon Carbide Wafer Surface after Chlorine Trifluoride Gas Etching
Abstract:
In order to develop the high etching rate reactor for silicon carbide, the 50-mm-diameter C-face 4H-silicon carbide wafer was etched using the chlorine trifluoride gas at 500 °C. By the deep etching, the concentric-circle-shaped valleys were formed at the positions corresponding to the radii of the pin-hole arrays of the gas distributor, as predicted by the calculation. The etching rate profile of 4H-silicon carbide was concluded to have a relationship with the local chlorine trifluoride gas supply . The wafer bow was small, even the wafer was very thin, about 160 μm thick.
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volume 924)
Pages:
369-372
Citation:
Online since:
June 2018
Permissions:
Share:
Citation: