4H-Silicon Carbide Wafer Surface after Chlorine Trifluoride Gas Etching

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In order to develop the high etching rate reactor for silicon carbide, the 50-mm-diameter C-face 4H-silicon carbide wafer was etched using the chlorine trifluoride gas at 500 °C. By the deep etching, the concentric-circle-shaped valleys were formed at the positions corresponding to the radii of the pin-hole arrays of the gas distributor, as predicted by the calculation. The etching rate profile of 4H-silicon carbide was concluded to have a relationship with the local chlorine trifluoride gas supply . The wafer bow was small, even the wafer was very thin, about 160 μm thick.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

369-372

Citation:

S. Okuyama et al., "4H-Silicon Carbide Wafer Surface after Chlorine Trifluoride Gas Etching", Materials Science Forum, Vol. 924, pp. 369-372, 2018

Online since:

June 2018

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