1MHz Switching Operation of 1200V Full SiC Power Module

Abstract:

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This paper develops 1200V, 50A full SiC half bridge power module, which embeds C snubber and gate resistors. Embedded C snubber suppresses surge voltage in fast switching operation, and gate resistors avoid gate oscillation of parallel connected SiC MOSFET in the module. 1MHz switching operation of developed module with 600V DC-link voltage is experimentally confirmed.

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Periodical:

Edited by:

Robert Stahlbush, Philip Neudeck, Anup Bhalla, Robert P. Devaty, Michael Dudley and Aivars Lelis

Pages:

832-835

Citation:

K. Hayashi et al., "1MHz Switching Operation of 1200V Full SiC Power Module", Materials Science Forum, Vol. 924, pp. 832-835, 2018

Online since:

June 2018

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$38.00

* - Corresponding Author

[1] TECHNICAL REVIEW, Sumitomo Electric Industries, 4/(2015).

[2] Application Note AN-941, International Rectifier.

[3] J.Konrad, M. Koini, M. Schossmann, M. Puff, Congress on Automotive Electronic Systems 3rd - 4th, 12/(2014).

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