1MHz Switching Operation of 1200V Full SiC Power Module

Kei Hayashi; Tsuyoshi Funaki; Hisato Michikoshi; Kenji Fukuda

doi:10.4028/www.scientific.net/MSF.924.832

Paper Titles

SiC MOSFET Device Parameter Spread and Ruggedness of Parallel Multichip Structures
p.811

An Experimental Demonstration of Short Circuit Protection of SiC Devices
p.818

650 V, 7 mΩ 4H-SiC DMOSFETs for Dual-Side Sintered Power Modules
p.822

Characterization and Modeling of a SiC MOSFET’s Turn-Off Overvoltage
p.827

1MHz Switching Operation of 1200V Full SiC Power Module
p.832

An Auxiliary Power Supply for Gate Drive of Medium Voltage SiC Devices in High Voltage Applications
p.836

30 kV Pulse Diode Stack Based on 4H-SiC
p.841

30-kW All-SiC Inverter with 3D-Printed Air-Cooled Heatsinks for Plug-In and Full Electric Vehicle Applications
p.845

Extremely Compact Half-Bridge SiC Power Modules Built into EV In-Wheel Motor
p.849

HomeMaterials Science ForumMaterials Science Forum Vol. 9241MHz Switching Operation of 1200V Full SiC Power...

1MHz Switching Operation of 1200V Full SiC Power Module

Abstract:

This paper develops 1200V, 50A full SiC half bridge power module, which embeds C snubber and gate resistors. Embedded C snubber suppresses surge voltage in fast switching operation, and gate resistors avoid gate oscillation of parallel connected SiC MOSFET in the module. 1MHz switching operation of developed module with 600V DC-link voltage is experimentally confirmed.