Materials Science Forum

ISSN: 1662-9752

Main Themes

Volumes
Edited by: A. Meerschaut
Online since: January 1992
Description: In the last few years the number of compounds known to show incommensurate (misfit) structures has been increasing very rapidly.

100-101

Edited by: G. Szenes
Online since: January 1992
Description: The book presents our present understanding of the basic physical processes in irradiated metals. All papers have been reviewed prior to publishing.

97-99

Edited by: G. Abbruzzese and P. Brozzo
Online since: January 1992
Description: The volumes present investigations on grain growth phenomena and their observation in various materials: metals and alloys, ceramics, sintered materials, thin films, etc.; normal and abnormal grain growth including twinning, texture, particle and other drag effects as well as analysis of topological aspects and grain size and grain orientation correlations; grain boundary structure, mobility and interaction with particles and impurity atoms. Experimental methods applicable to measurements of grain size, orientation of individual grains, etc.

94-96

Edited by: D. Tchoubar and J. Conard
Online since: January 1992
Description: The volumes center on the following themes:

91-93

Edited by: P.H. Shingu
Online since: January 1992
Description: Mechanical Alloying has recently been gathering world wide attention as a means of producing metastable and non-equilibrium alloy phases. There is a large potential for producing amorphous alloys by this technique. Mechanical alloying is also well suited for the production of nano-crystalline materials and oxide dispersion strengthened (ODS) superalloys, as well as for the synthesis of metal nitrides and hydrides.

88-90

Edited by: Gordon Davies, G.G. DeLeo and M. Stavola
Online since: January 1992
Description: Part 1. 1. Hydrogen in Elemental Hosts . 2. Transition Metal Impurities in Elemental Hosts . 3. Impurities in Elemental Hosts . 4. Irradiation Defects in Elemental Hosts . 5. Oxygen in GaAs, Si and Ge . 6. Theory . Part 2 . 7. Hydrogen in Compound Semiconductors . 8. Rare Earth Impurities in Silicon and Compound Semiconductors . 9. Transition Metal Impurities in Compound Semiconductors . 10. Donors in Compound Semiconductors . 11. EL2 And Anti-Site Related Defects . 12. Other Defects in III-V Semiconductors . 13. Growth Defects . Part 3 . 14. New Techniques . 15. Defects in SiC and Diamond . 16. Defects in II-VI Semiconductors . 17. Hetero-Epitaxy and Strained Layers . 18. Dislocations . 19. Superlattices . 20. Defects at Surfaces and Interfaces and in Low-Dimensional Structures . 21. Processing-Induced Defects . 22. Effects of Defects on Devices .

83-87

Edited by: R. Delhez and E.J. Mittemeijer
Online since: January 1991

79-82

Edited by: H. Hermann
Online since: January 1991
Description: The heterogeneity of a solid must be taken into account if the property under consideration is determined not only by the atomic short-range order but also by the spatial extent of regions with equal short-range order, the shape of these regions, the interface area between different regions, the correlation of shape and size of adjacent regions, the topological arrangement, etc. Such phenomena appear in most materials, e.g. in polycrystalline metals and alloys, powders, ceramics, porous materials, glasses and random composites.

78

Edited by: P. Barczy
Online since: January 1991
Description: The volume presents invited papers on topics of current interest.

77

Edited by: G. Schuster, K. Künstler and H. Ullmann
Online since: January 1991
Description: Solid ionic conductors have a wide range of applications and new research results are becoming available at an ever increasing rate. The book discusses and reviews our present knowledge in some critical areas. Some of the important papers are given below: Some Highlights:

76

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