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HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Precipitation Enhancement of "so Called"...

Precipitation Enhancement of "so Called" Defect-Free Czochralski Silicon Material

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Abstract:

Thermal treatments to enhance precipitation like RTA, ramp anneal and argon anneal were performed on low oxygen 300 mm wafers without vacancy or interstitial agglomerates (“so called” defect-free material). Best results were achieved using high temperature argon anneal leading to a homogenous BMD and denuded zone formation. Furthermore the getter efficiency was positively tested by intentional Ni-contamination. Concepts to overcome the slip danger like improved support geometries and nitrogen codoping were also evaluated and are seen to be beneficial.

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Gettering and Defect Engineering in Semiconductor Technology XI

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

11-16

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.11

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Online since:

December 2005

Authors:

Timo Müller, G. Kissinger, P. Krottenthaler, C. Seuring, R. Wahlich, Wilfried von Ammon

Keywords:

Argon Anneal, Getter Efficiency, Oxygen Precipitation, Precipitate Growth, Slip Prevention, Upper Yield Stress

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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