Precipitation Enhancement of "so Called" Defect-Free Czochralski Silicon Material

Abstract:

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Thermal treatments to enhance precipitation like RTA, ramp anneal and argon anneal were performed on low oxygen 300 mm wafers without vacancy or interstitial agglomerates (“so called” defect-free material). Best results were achieved using high temperature argon anneal leading to a homogenous BMD and denuded zone formation. Furthermore the getter efficiency was positively tested by intentional Ni-contamination. Concepts to overcome the slip danger like improved support geometries and nitrogen codoping were also evaluated and are seen to be beneficial.

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

11-16

DOI:

10.4028/www.scientific.net/SSP.108-109.11

Citation:

T. Müller et al., "Precipitation Enhancement of "so Called" Defect-Free Czochralski Silicon Material", Solid State Phenomena, Vols. 108-109, pp. 11-16, 2005

Online since:

December 2005

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Price:

$35.00

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