Precipitation Enhancement of "so Called" Defect-Free Czochralski Silicon Material
Thermal treatments to enhance precipitation like RTA, ramp anneal and argon anneal were performed on low oxygen 300 mm wafers without vacancy or interstitial agglomerates (“so called” defect-free material). Best results were achieved using high temperature argon anneal leading to a homogenous BMD and denuded zone formation. Furthermore the getter efficiency was positively tested by intentional Ni-contamination. Concepts to overcome the slip danger like improved support geometries and nitrogen codoping were also evaluated and are seen to be beneficial.
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
T. Müller et al., "Precipitation Enhancement of "so Called" Defect-Free Czochralski Silicon Material", Solid State Phenomena, Vols. 108-109, pp. 11-16, 2005