Intrinsic Point Defects in Silicon: a Unified View from Crystal Growth, Wafer Processing and Metal Diffusion
p.1
p.1
Committees
p.4
p.4
Preface
p.5
p.5
Precipitation Enhancement of "so Called" Defect-Free Czochralski Silicon Material
p.11
p.11
Oxygen Precipitation in Nitrogen Doped CZ Silicon
p.17
p.17
From Continuous to Quantized Charging Phenomena in Few Nanocrystals MOS Structures
p.25
p.25
Passivation of Ge Nanocrystals in SiO2
p.33
p.33
The Properties of Hydrostatically Strained Ge and Si Nanocrystals in Silicon Dioxide Matrix
p.39
p.39
Use of the Nitride to Reduce High-K Secondary Effects in Submicron MOSFETs
p.45
p.45
Committees
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Solid State Phenomena (Volumes 108-109)
Pages:
4-4
Online since:
December 2005
Сopyright:
© 2005 Trans Tech Publications Ltd. All Rights Reserved
Share: