Crack Detection and Analyses Using Resonance Ultrasonic Vibrations in Full-Size Crystalline Silicon Wafers

A.E. Belyaev; O. Polupan; W. Dallas; Sergei S. Ostapenko; D. Hess; John Wohlgemuth

doi:10.4028/www.scientific.net/SSP.108-109.509

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HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Crack Detection and Analyses Using Resonance...

Crack Detection and Analyses Using Resonance Ultrasonic Vibrations in Full-Size Crystalline Silicon Wafers

Abstract:

An experimental approach for fast crack detection and length determination in fullsize solar-grade crystalline silicon wafers using a Resonance Ultrasonic Vibrations (RUV) technique is presented. The RUV method is based on excitation of the longitudinal ultrasonic vibrations in full-size wafers. Using an external piezoelectric transducer combined with a high sensitivity ultrasonic probe and computer controlled data acquisition system, real-time frequency response analysis can be accomplished. On a set of identical crystalline Si wafers with artificially introduced periphery cracks, it was demonstrated that the crack results in a frequency shift in a selected RUV peak to a lower frequency and increases the resonance peak band width. Both characteristics were found to increase with the length of the crack. The frequency shift and bandwidth serve as reliable indicators of the crack appearance in silicon wafers and are suitable for mechanical quality control and fast wafer inspection.

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

509-514

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.509

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Online since:

December 2005

Authors:

A.E. Belyaev, O. Polupan, W. Dallas, Sergei S. Ostapenko, D. Hess, John Wohlgemuth

Keywords:

Crack, Resonance Vibrations, Silicon Wafer

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