Silicon Layers Grown on Siliconized Carbon Net: Producing and Properties

Abstract:

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The paper describes the elaboration of a method for producing composite Si/SiC wafers and investigation of their properties. The known two-shaping elements (TSE) method was used to produce the material. Pilot tests show that this composite material can be used for production of solar cells. The structure of silicon grains is elongated relative to the growth direction, the dislocation density in grains is of about (5÷8) ×104 cm-2, the average lifetime of minority carriers is 4÷6 µs.

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

503-508

DOI:

10.4028/www.scientific.net/SSP.108-109.503

Citation:

S. K. Brantov et al., "Silicon Layers Grown on Siliconized Carbon Net: Producing and Properties", Solid State Phenomena, Vols. 108-109, pp. 503-508, 2005

Online since:

December 2005

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Price:

$35.00

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