Silicon Layers Grown on Siliconized Carbon Net: Producing and Properties

Sergei K. Brantov; Vitaly V. Kveder; N.N. Kuznetzov; Valeri I. Orlov

doi:10.4028/www.scientific.net/SSP.108-109.503

Paper Titles

Сavity Effect in Hydrogen Ion Implanted Silicon-On-Insulator Structures
p.477

Misfit Dislocations in SiGe/Si Heterostructures: Nucleation - Propagation - Multiplication
p.483

The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon
p.497

Silicon Layers Grown on Siliconized Carbon Net: Producing and Properties
p.503

Crack Detection and Analyses Using Resonance Ultrasonic Vibrations in Full-Size Crystalline Silicon Wafers
p.509

Multicrystalline Silicon from Different Types of Bridgman Furnaces: Ingot and Cell Properties
p.515

Behaviour of Natural and Implanted Iron during Annealing of Multicrystalline Silicon Wafers
p.519

Improved P-Type or Raw N-Type Multicrystalline Silicon Wafers for Solar Cells
p.525

HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Silicon Layers Grown on Siliconized Carbon Net:...

Silicon Layers Grown on Siliconized Carbon Net: Producing and Properties

Abstract:

The paper describes the elaboration of a method for producing composite Si/SiC wafers and investigation of their properties. The known two-shaping elements (TSE) method was used to produce the material. Pilot tests show that this composite material can be used for production of solar cells. The structure of silicon grains is elongated relative to the growth direction, the dislocation density in grains is of about (5÷8) ×104 cm-2, the average lifetime of minority carriers is 4÷6 µs.

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology XI

View Preview

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

503-508

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.503

Citation:

Cite this paper

Online since:

December 2005

Authors:

Sergei K. Brantov, Vitaly V. Kveder, N.N. Kuznetzov, Valeri I. Orlov

Keywords:

Carbon Net, Crystal Structure, LBIC, Silicon Layer, TSD Method, TSE Method

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] S. Brantov, B. Epelbaum, V. Tatarchenko: J. Crystal Growth Vol. 82 (1/2) (1987), p.122.

Google Scholar

[2] S. Brantov, K. Filonov, B. Epelbaum, L. Miheeva, A. Sitnikov: J. Crystal Growth Vol. 104 (1990), p.98.

DOI: 10.1016/0022-0248(90)90315-c

Google Scholar

[3] R. Falcenberg, J. Grabmaier, G. Hoiler: Proccedings of the 6th Photovoltaic Solar Energy Conf., London, Great Britain, April 15-19 (1985), p.980.

Google Scholar

[4] A. Schoneker, L. Geerligs, A. Muller: Solid State Phenomena Vol. 95-96 (2004), p.149.

Google Scholar

[5] V. Kveder, W. Schroter, M. Seibt, A. Sattler: Solid State Phenomena Vol. 82-84 (2002), p.361.

Google Scholar

[6] V. Kveder, M. Kittler, W. Schroeter: Phys. Rev. B Vol. 63 (2001), p.115.

Google Scholar

[7] M. Zolotukhin, V. Kveder, Yu. Ossipyan: JETP Vol. 55 (1982), p.1189.

Google Scholar

[8] J. Simon, I. Perichaud, N. Burle, M. Pasquinelli and S. Martinuzzi: J. Appl. Phys. Vol. 80 (1996), p.4921.

Google Scholar

[9] S. Martinuzzi, I. Perichaud, J. Simon: Appl. Phys. Lett. Vol. 70 (1997), p.2744.

Google Scholar

[10] V. Kveder, M. Badylevich, E. Steinman, A. Izotov, M. Seibt and W. Schroeter: Appl. Phys. Lett. Vol. 84(12) (2004), p.2106.

DOI: 10.1063/1.1689402

Google Scholar