Misfit Dislocations in SiGe/Si Heterostructures: Nucleation - Propagation - Multiplication

V.I. Vdovin; M.G. Mil'vidskii; M.M. Rzaev; Friedrich Schäffler

doi:10.4028/www.scientific.net/SSP.108-109.483

Paper Titles

The Effect of Compound Composition and Strain on Vacancies in Si/SiGe Heterostructures
p.457

Strained Silicon on Ultrathin Silicon-Germanium Virtual Substrates
p.463

Radiation Induced Transformation of Impurity Centers in the Gate Oxide of Short-Channel SOI MOSFETS
p.469

Сavity Effect in Hydrogen Ion Implanted Silicon-On-Insulator Structures
p.477

Misfit Dislocations in SiGe/Si Heterostructures: Nucleation - Propagation - Multiplication
p.483

The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon
p.497

Silicon Layers Grown on Siliconized Carbon Net: Producing and Properties
p.503

Crack Detection and Analyses Using Resonance Ultrasonic Vibrations in Full-Size Crystalline Silicon Wafers
p.509

HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Misfit Dislocations in SiGe/Si Heterostructures:...

Misfit Dislocations in SiGe/Si Heterostructures: Nucleation - Propagation - Multiplication

Abstract:

We present experimental data on the effect of low-temperature buffer layers on the dislocation structure formation in SiGe/Si strained-layer heterostructures under thermal annealing. Specific subjects include mechanisms of misfit dislocation nucleation, propagation and multiplication as well as the role of intrinsic point defects in these processes. Samples with lowtemperature Si (400°C) and SiGe (250°C) buffer layers were grown by MBE. In general, the processes of MD generation occur similarly in the heterostructures studied independently of the alloy composition (Ge content: 0.15, 0.30) and kind of buffer layer. Intrinsic point defects related to the low-temperature epitaxial growth influence mainly the rate of misfit dislocation nucleation.

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology XI

View Preview

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

483-488

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.483

Citation:

Cite this paper

Online since:

December 2005

Authors:

V.I. Vdovin, M.G. Mil'vidskii, M.M. Rzaev, Friedrich Schäffler

Keywords:

Defect Characterization, Misfit Dislocation, Molecular-Beam Epitaxy MBE, SiGe/Si Heterostructures

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] T.G. Yugova, V.I. Vdovin, M.G. Mil'vidskii, L.K. Orlov, V.A. Tolomasov, A.V. Potapov, N.V. Abrosimov: Thin Solid Films Vol. 336 (1998), p.112. b.

DOI: 10.1016/s0040-6090(98)01304-2

Google Scholar

[2] H. Chen, L. W. Guo, Q. Cui, Q. Hu, Q. Huang, and M. Zhou: J. Appl. Phys. Vol. 79 (1996), p.1167.

Google Scholar

[3] C. -X. Du, W. -X. Ni, K.B. Joelsson, F. Duteil, G.V. Hansson: Optical Materials Vol. 14 (2000), p.259.

Google Scholar

[4] Yu.B. Bolkhovityanov, A.S. Deryabin, A.K. Gutakovskii, M.A. Revenko, L. V. Sokolov: J. Appl. Phys. Vol. 96 (2004), p.7665.

Google Scholar

[5] M. Rea, S. Scalese, S. Mirabella, A. Terrasi, F. Priolo, E. Rimini, M. Berti, A. Coati, A. Drigo, A. Carnera, D. De Salvador, C. Spinella, A. La Mantia: J. Crystal Growth Vol. 227-228 (2001), p.749.

DOI: 10.1016/s0022-0248(01)00820-x

Google Scholar

[6] M. Bauer, K. Lyutovich, M. Oehme, E. Kasper, H. -J. Herzog, F. Ernst: Thin Solid Films Vol. 369 (2000), p.152.

DOI: 10.1016/s0040-6090(00)00796-3

Google Scholar

[7] V.I. Vdovin, T.G. Yugova, M.M. Rzaev, F. Schäffler, M.G. Mil'vidskii: Phys. Stat. Sol. (c) Vol. 2 (2005), p. (1938).

Google Scholar

[8] Cs. Szeles, P. Asoka-Kumar, K. Lynn, G. H. -J. Gossmann, F.C. Unterwald, T. Boone: Appl. Phys. Lett. Vol. 66 (1995), p.2855.

DOI: 10.1063/1.113452

Google Scholar

[9] F.K. LeGoues, B.S. Meyerson, J.F. Morar, and P.D. Kirchner: J. Appl. Phys. Vol. 71 (1992), p.4230.

Google Scholar

[10] J. Zou and D.J.H. Cockayne: J. Appl. Phys. Vol. 74 (1993), p.925.

Google Scholar

[11] P.M.J. Marée, J.C. Barbour, J.F. van der Veen, K.L. Kavanang, C.W.T. Bulle-Lieuwma, M.P.A. Viegers: J. Appl. Phys. Vol. 62 (1987), p.4413.

DOI: 10.1063/1.339078

Google Scholar

[12] S.W. Bedell, H. Chen, D.K. Sadana, K. Fogel and A. Domenicucci: Mat. Res. Soc. Symp. Proc. Vol. 809 (2004), p. B1. 5. 1.

Google Scholar