Misfit Dislocations in SiGe/Si Heterostructures: Nucleation - Propagation - Multiplication

Abstract:

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We present experimental data on the effect of low-temperature buffer layers on the dislocation structure formation in SiGe/Si strained-layer heterostructures under thermal annealing. Specific subjects include mechanisms of misfit dislocation nucleation, propagation and multiplication as well as the role of intrinsic point defects in these processes. Samples with lowtemperature Si (400°C) and SiGe (250°C) buffer layers were grown by MBE. In general, the processes of MD generation occur similarly in the heterostructures studied independently of the alloy composition (Ge content: 0.15, 0.30) and kind of buffer layer. Intrinsic point defects related to the low-temperature epitaxial growth influence mainly the rate of misfit dislocation nucleation.

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

483-488

DOI:

10.4028/www.scientific.net/SSP.108-109.483

Citation:

V.I. Vdovin et al., "Misfit Dislocations in SiGe/Si Heterostructures: Nucleation - Propagation - Multiplication ", Solid State Phenomena, Vols. 108-109, pp. 483-488, 2005

Online since:

December 2005

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Price:

$35.00

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