The Effect of Compound Composition and Strain on Vacancies in Si/SiGe Heterostructures

Mariya G. Ganchenkova; V.A. Borodin; S. Nicolaysen; Risto M. Nieminen

doi:10.4028/www.scientific.net/SSP.108-109.457

Paper Titles

Formation of Vacancies and Divacancies in Plane-Stressed Silicon
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Selective SiGe Etching Formed by Localized Ge Implantation on SOI
p.439

Impact of the Growth Parameters on the Structural Properties of Si_0.8Ge_0.2 Virtual Substrates
p.445

Characterization of SiGe Layer on Insulator by In-Plane Diffraction Method
p.451

The Effect of Compound Composition and Strain on Vacancies in Si/SiGe Heterostructures
p.457

Strained Silicon on Ultrathin Silicon-Germanium Virtual Substrates
p.463

Radiation Induced Transformation of Impurity Centers in the Gate Oxide of Short-Channel SOI MOSFETS
p.469

Сavity Effect in Hydrogen Ion Implanted Silicon-On-Insulator Structures
p.477

Misfit Dislocations in SiGe/Si Heterostructures: Nucleation - Propagation - Multiplication
p.483

HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109The Effect of Compound Composition and Strain on...

The Effect of Compound Composition and Strain on Vacancies in Si/SiGe Heterostructures

Abstract:

In this paper we study the effect of chemical environment and elastic strains, which can arise in layered heterostructures due to the lattice parameter mismatch, on the vacancy formation energy in random Si-Ge compounds. Ab initio calculations demonstrate a number of simple trends characterizing the vacancy formation energy dependence on vacancy charge, the number of Ge atoms in its neighbourhood and on the magnitude of elastic strains. The obtained parameters of vacancy-germanium interaction indicate, in particular, a tendency for preferential vacancy accumulation in SiGe region of Si/SiGe/Si layered structures, which is confirmed here by Monte- Carlo simulation of high-temperature vacancy annealing and agrees well with recent experimental observations.

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

457-462

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.457

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Online since:

December 2005

Authors:

Mariya G. Ganchenkova, V.A. Borodin, S. Nicolaysen, Risto M. Nieminen

Keywords:

Ab Initio, Germanium, Heterostructure, Kinetic Monte Carlo, Silicon, Strain, Vacancy

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