Impact of the Growth Parameters on the Structural Properties of Si0.8Ge0.2 Virtual Substrates

Abstract:

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We have focused in this paper on the impact of the growth rate and of the grading rate on the structural properties of Si0.8Ge0.2 virtual substrates grown at 900°C in a commercial reduced pressure chemical vapour deposition reactor. Adopting a grading rate of 4% Ge / $m together with a growth rate around 140 nm min.-1 yields very high quality Si0.8Ge0.2 virtual substrates. Their macroscopic degree of strain relaxation is indeed very close to 100%, their surface root mean square roughness is around 2.3 nm and most importantly their field threading dislocation density is of the order of 6x104 cm-2 only, with almost no pile-ups.

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

445-450

DOI:

10.4028/www.scientific.net/SSP.108-109.445

Citation:

Y. Bogumilowicz et al., "Impact of the Growth Parameters on the Structural Properties of Si0.8Ge0.2 Virtual Substrates", Solid State Phenomena, Vols. 108-109, pp. 445-450, 2005

Online since:

December 2005

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Price:

$35.00

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