Defect Interaction Mechanisms between Antimony and Indium in Silicon

M.M. De Souza; Srinivasan Chakravarthi; Amitabh Jain

doi:10.4028/www.scientific.net/SSP.108-109.425

Paper Titles

Silicon Doped with Sulfur as a Detector Material for High Speed Infrared Image Converters
p.401

Theoretical Investigations of the Diffusion of Nitrogen-Pair Defects in Silicon
p.407

General Model of Diffusion of Interstitial Oxygen in Silicon, Germanium and Silicon - Germanium Crystals
p.413

Low-Temperature Radiation Enhanced Diffusion of Implanted Platinum in Silicon with Increased Controllability
p.419

Defect Interaction Mechanisms between Antimony and Indium in Silicon
p.425

Formation of Vacancies and Divacancies in Plane-Stressed Silicon
p.433

Selective SiGe Etching Formed by Localized Ge Implantation on SOI
p.439

Impact of the Growth Parameters on the Structural Properties of Si_0.8Ge_0.2 Virtual Substrates
p.445

Characterization of SiGe Layer on Insulator by In-Plane Diffraction Method
p.451

HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Defect Interaction Mechanisms between Antimony and...

Defect Interaction Mechanisms between Antimony and Indium in Silicon

Abstract:

Heavy species such as Sb, In, and Ge are required to meet the challenges of future dopant engineering in planar CMOS technology. An understanding of the interactions of these species with each other and with conventional dopants is urgently required in order to meet aggressive criteria for junction control in sub-sixty nanometer technology nodes. In the current work, the interactions between Sb and In have been explored as a function of ion implantation dose and annealing treatment. The data shows strong interaction between the two species which prevents the dissolution of an as-implanted In profile even after high temperature anneal. The nature of the interaction is probed with fundamental calculations using plane wave density functional theory. A strong binding for an Sb-In-vacancy complex is revealed. Band structure analysis indicates that this defect complex introduces several unoccupied states primarily in the upper half of the bandgap. The two species contribute with nearly equal magnitude to the top valence band.

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology XI

View Preview

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

425-432

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.425

Citation:

Cite this paper

Online since:

December 2005

Authors:

M.M. De Souza, Srinivasan Chakravarthi, Amitabh Jain

Keywords:

Antimony Sb, Binding, Doping, Indium In, Silicon

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] K. Miyashita, H. Yoshimura, M. Takayanagi, M. Fujiwara, K. Adachi, T. Nakayama, and Y. Toyoshima, Tech. Digest Int. Electron Devices Meeting, 645 (1999).

DOI: 10.1109/iedm.1999.824235

Google Scholar

[2] T. Noda, Journal Appl. Phys. 91, 639 (2002).

Google Scholar

[3] S. Chakravarthi, P.R. Chidambaram, B. Hornung and C. Machala, in SISPAD 2004 Technical Digest (IEEE).

Google Scholar

[4] G Kresse and J Furthmüller, Comput. Mater. Sci. 6. 16 (1996); G Kresse and J. Hafner, Phys. Rev B 47 558 (1993).

Google Scholar

[5] ]. D. Vanderbilt, Phys. Rev. B 41 7892 (1990).

Google Scholar

[6] C. S. Nichols, C. G. Van de Walle and S. T. Pantelides, Phys. Rev. B 40, 5484 (1989).

Google Scholar

[7] N. Larsen and P. Kringhoj, Appl. Phys. Lett. 68, 2684 (1996).

Google Scholar