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HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Radiation Induced Transformation of Impurity...

Radiation Induced Transformation of Impurity Centers in the Gate Oxide of Short-Channel SOI MOSFETS

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Gettering and Defect Engineering in Semiconductor Technology XI

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

469-476

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.469

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Online since:

December 2005

Authors:

A.A. Evtukh, A. Kizjak, V.G. Litovchenko, Cor Claeys, Eddy Simoen

Keywords:

Annealing, Charge Build-Up, Defect, Impurity, Metal-Oxide-Semiconductor Field Effect Transistor (MOSFET), Radiation

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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