Radiation Induced Transformation of Impurity Centers in the Gate Oxide of Short-Channel SOI MOSFETS

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Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

469-476

DOI:

10.4028/www.scientific.net/SSP.108-109.469

Citation:

A.A. Evtukh et al., "Radiation Induced Transformation of Impurity Centers in the Gate Oxide of Short-Channel SOI MOSFETS ", Solid State Phenomena, Vols. 108-109, pp. 469-476, 2005

Online since:

December 2005

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$35.00

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