Quantum Well Related Conductivity and Deep Traps in SiGe/Si Structures
Electrical transport and traps in vertical SiGe/Si QW structures of low background doping level are studied in the presented report. Temperature activation of holes from the quantum well was found to determine the vertical current through Si/SiGe/Si structures at T > 160 K. At lower temperatures (T < 130 K), the current mechanism is attributed to a thermally activated tunneling of holes from quantum well. Deep traps are observed in the Si/SiGe/Si structures in high concentration (1011 – 1012 cm-2). Traps are most likely assistance in the current in the vertical Si/SiGe/Si structures as recombination centers near the QW.
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
I.V. Antonova et al., "Quantum Well Related Conductivity and Deep Traps in SiGe/Si Structures", Solid State Phenomena, Vols. 108-109, pp. 489-496, 2005