Quantum Well Related Conductivity and Deep Traps in SiGe/Si Structures

I.V. Antonova; L.L. Golik; M.S. Kagan; V.I. Polyakov; A.I. Rukavischnikov; N.M. Rossukanyi; J. Kolodzey

doi:10.4028/www.scientific.net/SSP.108-109.489

Paper Titles

Strained Silicon on Ultrathin Silicon-Germanium Virtual Substrates
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Radiation Induced Transformation of Impurity Centers in the Gate Oxide of Short-Channel SOI MOSFETS
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Сavity Effect in Hydrogen Ion Implanted Silicon-On-Insulator Structures
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Misfit Dislocations in SiGe/Si Heterostructures: Nucleation - Propagation - Multiplication
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The Role of Silicon Interstitials in the Formation of Boron-Oxygen Defects in Crystalline Silicon
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Silicon Layers Grown on Siliconized Carbon Net: Producing and Properties
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Crack Detection and Analyses Using Resonance Ultrasonic Vibrations in Full-Size Crystalline Silicon Wafers
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Multicrystalline Silicon from Different Types of Bridgman Furnaces: Ingot and Cell Properties
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Quantum Well Related Conductivity and Deep Traps in SiGe/Si Structures

Abstract:

Electrical transport and traps in vertical SiGe/Si QW structures of low background doping level are studied in the presented report. Temperature activation of holes from the quantum well was found to determine the vertical current through Si/SiGe/Si structures at T > 160 K. At lower temperatures (T < 130 K), the current mechanism is attributed to a thermally activated tunneling of holes from quantum well. Deep traps are observed in the Si/SiGe/Si structures in high concentration (1011 – 1012 cm-2). Traps are most likely assistance in the current in the vertical Si/SiGe/Si structures as recombination centers near the QW.