Сavity Effect in Hydrogen Ion Implanted Silicon-On-Insulator Structures

Ida E. Tyschenko; K.S. Zhuravlev; A.G. Cherkov; Andrzej Misiuk; V.P. Popov

doi:10.4028/www.scientific.net/SSP.108-109.477

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HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Сavity Effect in Hydrogen Ion Implanted...

Сavity Effect in Hydrogen Ion Implanted Silicon-On-Insulator Structures

Abstract:

Cavity effect on the room-temperature (RT) photoluminescence (PL) from emitting centers in the top silicon layer of silicon-on-insulator (SOI) structure has been studied. The lightemitting centers were produced by the implantation of H+ ions and subsequent annealing at the temperatures Ta = 450-1000 oC for 5 h in an Ar ambient under pressure P = 1 - 1.2×104 bar. It has been obtained that annealing under hydrostatic pressure higher than 6 kbar prevented the outdiffusion of hydrogen in the form of gas bubbles, which took place after annealing at Ta≥600 oC under atmospheric conditions. Absence of micro-pores and gas bubbles in the top surface region creates the conditions to retain the mirror quality of the SOI/air interface. A wavelength-selective effect of the formed cavity on visible PL has been observed from the H+ ion implanted SOI structures annealed under pressure of 12 kbar. The cavity enhancement of PL emission for 23-40 times has been found at the wavelength of 515 and 560 nm.

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

477-482

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.477

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Online since:

December 2005

Authors:

Ida E. Tyschenko, K.S. Zhuravlev, A.G. Cherkov, Andrzej Misiuk, V.P. Popov

Keywords:

Cavity, Hydrogen, Photoluminescence (PL), Pressure, Silicon-on-Insulator (SOI)

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