Сavity Effect in Hydrogen Ion Implanted Silicon-On-Insulator Structures
Cavity effect on the room-temperature (RT) photoluminescence (PL) from emitting centers in the top silicon layer of silicon-on-insulator (SOI) structure has been studied. The lightemitting centers were produced by the implantation of H+ ions and subsequent annealing at the temperatures Ta = 450-1000 oC for 5 h in an Ar ambient under pressure P = 1 - 1.2×104 bar. It has been obtained that annealing under hydrostatic pressure higher than 6 kbar prevented the outdiffusion of hydrogen in the form of gas bubbles, which took place after annealing at Ta≥600 oC under atmospheric conditions. Absence of micro-pores and gas bubbles in the top surface region creates the conditions to retain the mirror quality of the SOI/air interface. A wavelength-selective effect of the formed cavity on visible PL has been observed from the H+ ion implanted SOI structures annealed under pressure of 12 kbar. The cavity enhancement of PL emission for 23-40 times has been found at the wavelength of 515 and 560 nm.
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
I. E. Tyschenko et al., "Сavity Effect in Hydrogen Ion Implanted Silicon-On-Insulator Structures", Solid State Phenomena, Vols. 108-109, pp. 477-482, 2005