The Employment of Cathodoluminescent Method for Characterization of Silicon Oxide - Silicon Interface

Abstract:

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In this work we studied the cathodoluminescence (CL) of thin silicon oxide and natural silicon oxide grown on different types of silicon substrates (p-silicon and n-silicon with different content of boron and phosphor). At the same time we studied the distribution of intrinsic defects on depth for thermal silicon oxide films with depth resolution 10-20 nm. The method of local cathodoluminescence was used for definition the structure defects in SiO2 think layer and control of the quality of SiO2-Si interface.

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

649-654

DOI:

10.4028/www.scientific.net/SSP.108-109.649

Citation:

M.V. Zamoryanskaya and V.I. Sokolov, "The Employment of Cathodoluminescent Method for Characterization of Silicon Oxide - Silicon Interface", Solid State Phenomena, Vols. 108-109, pp. 649-654, 2005

Online since:

December 2005

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$35.00

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