The Employment of Cathodoluminescent Method for Characterization of Silicon Oxide - Silicon Interface

Abstract:

In this work we studied the cathodoluminescence (CL) of thin silicon oxide and natural silicon oxide grown on different types of silicon substrates (p-silicon and n-silicon with different content of boron and phosphor). At the same time we studied the distribution of intrinsic defects on depth for thermal silicon oxide films with depth resolution 10-20 nm. The method of local cathodoluminescence was used for definition the structure defects in SiO2 think layer and control of the quality of SiO2-Si interface.

• Periodical: Solid State Phenomena (Volumes 108-109)
• Pages: 649-654
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.108-109.649
• Online since: December 2005
• Authors: M.V. Zamoryanskaya, V.I. Sokolov
• Keywords: Cathodoluminescence, Silicon, Silicon Oxide (SiO), SiO₂/Si Interface

References

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DOI: 10.1016/s0022-3093(99)00558-x

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