The Build-Up of Strain Fields in Czochralski-Si Observed in Real Time by High Energy X-Ray Diffraction

Matthias Stockmeier; Matthias Weisser; Rainer Hock; Andreas Magerl

doi:10.4028/www.scientific.net/SSP.108-109.631

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HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109The Build-Up of Strain Fields in Czochralski-Si...

The Build-Up of Strain Fields in Czochralski-Si Observed in Real Time by High Energy X-Ray Diffraction

Abstract:

The build-up of strain fields caused by the precipitation of oxygen in Czochralski-silicon during annealing up to 1200°C and for process times up to 70 hours has been observed in real time by high energy x-ray diffraction. Five different processes are distinguished in the temperature evolution of the intensity and of the rocking width of the silicon 220-reflection. These features are attributed to different precipitation mechanisms. A fit to part of the data with a diffusion limited precipitation model leads to an activation energy for oxygen diffusion in silicon of 2.2 eV in the temperature range from 700°C to 950°C.

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Periodical:

Solid State Phenomena (Volumes 108-109)

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631-636

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.631

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Online since:

December 2005

Authors:

Matthias Stockmeier, Matthias Weisser, Rainer Hock, Andreas Magerl

Keywords:

Czochralski Si, High Energy X-Ray Diffraction, Internal Gettering

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