Annealing Behaviour of New Nitrogen Infrared Absorption Peaks in CZ Silicon

Abstract:

Article Preview

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

609-614

DOI:

10.4028/www.scientific.net/SSP.108-109.609

Citation:

N. Inoue et al., "Annealing Behaviour of New Nitrogen Infrared Absorption Peaks in CZ Silicon", Solid State Phenomena, Vols. 108-109, pp. 609-614, 2005

Online since:

December 2005

Export:

Price:

$35.00

In order to see related information, you need to Login.