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HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Annealing Behaviour of New Nitrogen Infrared...

Annealing Behaviour of New Nitrogen Infrared Absorption Peaks in CZ Silicon

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Gettering and Defect Engineering in Semiconductor Technology XI

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

609-614

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.609

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Online since:

December 2005

Authors:

N. Inoue, M. Nakatsu, K. Tanahashi, Hiroshi Yamada-Kaneta, Haruhiko Ono, V.D. Akhmetov, O. Lysytskiy, Hans Richter

Keywords:

Annealing, Czochralski Silicon, Infrared Absorption, Nitrogen

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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