Potential and Limitations of Electron Holography in Silicon Research

Abstract:

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We report on electron holography as a promising candidate for diagnostics in silicon technology and research. Electron holography determines the local phase shift of the electron wave passing through a sample. The phase is proportional to the 2D projected electrostatic potential in the sample and thus reveals p-n junctions and, indirectly, doping. We demonstrate detection of submonolayer boron layers in Si and SiGe, measurement of Ge concentration in SiGe and qualitative 2D oxygen mapping in SiO2/Si structures with 0.5 nm resolution, and comparison of doping in two bipolar transistors with different base implant. Resolution and noise limits are discussed.

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

603-608

DOI:

10.4028/www.scientific.net/SSP.108-109.603

Citation:

P. Formanek and M. Kittler, "Potential and Limitations of Electron Holography in Silicon Research", Solid State Phenomena, Vols. 108-109, pp. 603-608, 2005

Online since:

December 2005

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$35.00

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