Potential and Limitations of Electron Holography in Silicon Research

Abstract:

We report on electron holography as a promising candidate for diagnostics in silicon technology and research. Electron holography determines the local phase shift of the electron wave passing through a sample. The phase is proportional to the 2D projected electrostatic potential in the sample and thus reveals p-n junctions and, indirectly, doping. We demonstrate detection of submonolayer boron layers in Si and SiGe, measurement of Ge concentration in SiGe and qualitative 2D oxygen mapping in SiO2/Si structures with 0.5 nm resolution, and comparison of doping in two bipolar transistors with different base implant. Resolution and noise limits are discussed.

• Periodical: Solid State Phenomena (Volumes 108-109)
• Pages: 603-608
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.108-109.603
• Online since: December 2005
• Authors: Peter Formanek, Martin Kittler
• Keywords: Crystal Defect, Dopant Profiling, Electron Holography, Semiconductor Devices

References

[1] International Technology Roadmap for Semiconductors 2002 - Metrology, http: /public. itrs. net.

[2] F. Giannazzo, F. Priolo, V. Raineri, V. Privitera, Appl. Phys. Lett. 78 (2001) 598.

[3] P. De Wolf, R. Stephenson, T. Trenkler, T. Clarysse, and T. Hantschel, W. Vandervorst, J. Vac. Sci. Technol. B18 (2000) 361.

DOI: 10.1116/1.591198

[4] G. Möllenstedt, H. Düker, Zeitschr. für Physik 42 (1955) 41.

[5] M. Lehmann, H. Lichte, Microscopy and Microanalysis 8 (2002) 447.

[6] W. -D. Rau, P. Schwander, F. H. Baumann, W. Höppner, A. Ourmazd, Phys. Rev. Lett. 82 (1999) 2614.

[7] S. Frabboni, G. Matteucci, G. Pozzi, Phys. Rev. Lett. 55 (1985) 2196.

[8] M. R. McCartney, D. J. Smith, R. Hull, J. C. Bean, E. Völkl, B. Frost, Appl. Phys. Lett 65 (1994) 2603.

[9] W. -D. Rau, F. H. Baumann, H. -H. Vuong, B. Heinemann, W. Höppner, C. S. Rafferty, H. Rücker, P. Schwander, and A. Ourmazd, IEDM Tech. Digest (1998), p.713.

[10] P. Formanek, E. Bugiel, G. Weidner, submitted to Ultramicroscopy.

[11] P. Formanek, TEM-Holographie an Bauelementestrukturen der Mikroelektronik, PhD thesis, Brandenburgische Technische Universität Cottbus, Germany, (2005).

[12] D. Krüger, P. Formánek, E. Pippel, J. Woltersdorf, E. Bugiel, R. Kurps, G. Weidner, J. Vac. Sci. Technol. B22 (2004) 1179.

DOI: 10.1116/1.1740761

[13] P. Formánek and M. Kittler, J. Phys.: Condens. Matter 16 (2004) S193.

[14] N. Duhayon et al, J. Vac. Sci. Technol. B 22 (2004) 385.

[15] D. Krüger, P. Gaworzewski, R. Kurps, and H. P. Zeindl, J. Vac. Sci. Technol. B 14 (1996) 341.

[16] Y.Y. Wang, M. Kawasaki, J. Bruley, M. Gribelyuk, A. Domenicucci, J. Gaudiello, Ultramicroscopy 101 (2004) 63.

DOI: 10.1016/j.ultramic.2004.04.003

[17] N. de Jonge, Y. Lamy, K. Schoots, T. H. Oostenkamp, Nature 420 (2002) 393.

[18] L. Houben, M. Luysberg, T. Brammer, Phys. Rev. B 70 (2004) 165313.

[19] P. Formanek, E. Bugiel, submitted to Ultramicroscopy.