Improved Measurement of Carbon in Poly- and CZ Crystal Silicon by Means of Low Temperature FTIR

Abstract:

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This work proposes some improvements over the current state-of-the-art of carbon measurement in silicon by means of Fourier Transform Infrared Spectroscopy (FTIR) at low temperature (77 K), as described in the ASTM F1391-93 (2000) standard method.

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

591-596

DOI:

10.4028/www.scientific.net/SSP.108-109.591

Citation:

M. Porrini et al., "Improved Measurement of Carbon in Poly- and CZ Crystal Silicon by Means of Low Temperature FTIR ", Solid State Phenomena, Vols. 108-109, pp. 591-596, 2005

Online since:

December 2005

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Price:

$35.00

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