Improved Measurement of Carbon in Poly- and CZ Crystal Silicon by Means of Low Temperature FTIR

M. Porrini; Ivo Crössmann; M.G. Pretto; R. Scala; Reinhard Wolf

doi:10.4028/www.scientific.net/SSP.108-109.591

Paper Titles

EBIC and DLTS Study of Deformation Induced Defect Thermal Stability in n-Si
p.567

Cobalt Contamination in Silicon
p.571

Local Measurements of Diffusion Length and Chemical Character of Metal Clusters in Multicrystalline Silicon
p.577

Comparison of Efficiencies of Different Surface Passivations Applied to Crystalline Silicon
p.585

Improved Measurement of Carbon in Poly- and CZ Crystal Silicon by Means of Low Temperature FTIR
p.591

Laser Scattering Tomography on Magnetic CZ-Si for Semiconductor Process Optimization
p.597

Potential and Limitations of Electron Holography in Silicon Research
p.603

Annealing Behaviour of New Nitrogen Infrared Absorption Peaks in CZ Silicon
p.609

Atomic Environment of Positrons Annihilating in HT Cz-Si Crystal
p.615

HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Improved Measurement of Carbon in Poly- and CZ...

Improved Measurement of Carbon in Poly- and CZ Crystal Silicon by Means of Low Temperature FTIR

Abstract:

This work proposes some improvements over the current state-of-the-art of carbon measurement in silicon by means of Fourier Transform Infrared Spectroscopy (FTIR) at low temperature (77 K), as described in the ASTM F1391-93 (2000) standard method.

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

591-596

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.591

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Online since:

December 2005

Authors:

M. Porrini, Ivo Crössmann, M.G. Pretto, R. Scala, Reinhard Wolf

Keywords:

Carbon, Fourier Transform Infrared Spectroscopy (FTIR), Silicon

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References

[1] R. C. Newman, in Oxygen, Carbon, Hydrogen and Nitrogen in Crystalline Silicon, Materials Research Society Proceedings, Vol 59 (1986) p.403.

Google Scholar

[2] ASTM F1391-93(2000), The Annual Book of ASTM Standards, Vol. 10. 05 (standards on disk), 2003, The American Society for Testing and Materials.

Google Scholar

[3] N. Inoue, T. Arai, T. Nozaki, K. Endo, K. Mizuma, Emerging Semiconductor Technology, ASTM STP 960, D. C. Gupta and P. H. Langer Eds., American Society for Testing and Metarils, 1987, p.365.

Google Scholar

[4] B.O. Kolbesen and T. Kladenović, Kristall und Technik, Vol 15 (1980) p. K1.

Google Scholar

[5] H. Saito and H. Shirai, J. Electrochem. Soc. 147 (2000) p.1210.

Google Scholar

[6] R. W. Michelmann, J. Krauskopf, J. D. Meyer, K. Bethge, Nuclear Instr. & Methods, B51, 1 (1990).

Google Scholar

[7] B. Wiedemann, A. Markwitz, M. Waldschmidt, K. Bethge, G. Wolf, W. Schuetze, Advances in Mass Spectrometry (Vol 11B), P. Longevialle, Editor, Heyden & Son, Proceedings of the 11 th International Mass Spectrometry Conference, Bordeaux, 1716-1717 (1988).

Google Scholar

[8] ASTM F1723-02(2000), The Annual Book of ASTM Standards, Vol. 10. 05 (standards on disk), 2003, The American Society for Testing and Materials.

Google Scholar

[9] B. Wiedemann, J. D. Meyer, H. Ch. Alt, H. Riemann, Electrochem. Soc. Proc. Vol. 2003-03, p.83.

Google Scholar

[10] L.L. Hwang, J. Bucci, J. R. McCormick, J. Electrochem. Soc. 138 (1991) 576.

Google Scholar

[11] B.O. Kolbesen, A. Mühlbauer, Solid State Electronics 25 (1982) 759.

Google Scholar

[12] M. Porrini, Carbon Contamination in Czochralski Silicon Crystals, presented at the AICC/DGKK Conference, 3-5 April 1989, Parma, Italy, P 18.

Google Scholar