Improved Measurement of Carbon in Poly- and CZ Crystal Silicon by Means of Low Temperature FTIR
This work proposes some improvements over the current state-of-the-art of carbon measurement in silicon by means of Fourier Transform Infrared Spectroscopy (FTIR) at low temperature (77 K), as described in the ASTM F1391-93 (2000) standard method.
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
M. Porrini, I. Crössmann, M.G. Pretto, R. Scala, R. Wolf, "Improved Measurement of Carbon in Poly- and CZ Crystal Silicon by Means of Low Temperature FTIR ", Solid State Phenomena, Vols. 108-109, pp. 591-596, 2005