Laser Scattering Tomography on Magnetic CZ-Si for Semiconductor Process Optimization

Thomas Steinegger; M. Naumann; F.G. Kirscht

doi:10.4028/www.scientific.net/SSP.108-109.597

Paper Titles

Cobalt Contamination in Silicon
p.571

Local Measurements of Diffusion Length and Chemical Character of Metal Clusters in Multicrystalline Silicon
p.577

Comparison of Efficiencies of Different Surface Passivations Applied to Crystalline Silicon
p.585

Improved Measurement of Carbon in Poly- and CZ Crystal Silicon by Means of Low Temperature FTIR
p.591

Laser Scattering Tomography on Magnetic CZ-Si for Semiconductor Process Optimization
p.597

Potential and Limitations of Electron Holography in Silicon Research
p.603

Annealing Behaviour of New Nitrogen Infrared Absorption Peaks in CZ Silicon
p.609

Atomic Environment of Positrons Annihilating in HT Cz-Si Crystal
p.615

Infrared Absorption Measurement of Carbon Concentration down to 1x10¹⁴/cm³ in CZ Silicon
p.621

HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Laser Scattering Tomography on Magnetic CZ-Si for...

Laser Scattering Tomography on Magnetic CZ-Si for Semiconductor Process Optimization

Abstract:

Laser scattering tomography (LST) and band-to-band photoluminescence (PL) are applied for supporting a MEMS process optimization. Process wafers are based on magnetic CZ grown silicon material. LST allows the characterization of number-size distributions of oxygen precipitates in various stages of the process flow. Precipitation is shown to be affected by the design of high-temperature anneal post initial oxidation. PL gives useful information on relative concentration level and radial distribution of recombination centers within process wafers. The initial oxidation leads to significant reduction of recombination centers. The combined LST/PL information enables valuable conclusions towards process optimization.

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

597-602

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.597

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Online since:

December 2005

Authors:

Thomas Steinegger, M. Naumann, F.G. Kirscht

Keywords:

Band-to-Band Photoluminescence, Defect Engineering, Laser Scattering Tomography, Oxygen Precipitates, Semiconductor Process Optimization

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