Laser Scattering Tomography on Magnetic CZ-Si for Semiconductor Process Optimization

Abstract:

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Laser scattering tomography (LST) and band-to-band photoluminescence (PL) are applied for supporting a MEMS process optimization. Process wafers are based on magnetic CZ grown silicon material. LST allows the characterization of number-size distributions of oxygen precipitates in various stages of the process flow. Precipitation is shown to be affected by the design of high-temperature anneal post initial oxidation. PL gives useful information on relative concentration level and radial distribution of recombination centers within process wafers. The initial oxidation leads to significant reduction of recombination centers. The combined LST/PL information enables valuable conclusions towards process optimization.

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

597-602

DOI:

10.4028/www.scientific.net/SSP.108-109.597

Citation:

T. Steinegger et al., "Laser Scattering Tomography on Magnetic CZ-Si for Semiconductor Process Optimization", Solid State Phenomena, Vols. 108-109, pp. 597-602, 2005

Online since:

December 2005

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Price:

$35.00

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