Infrared Absorption Measurement of Carbon Concentration down to 1x10¹⁴/cm³ in CZ Silicon

Abstract:

Measurement of carbon concentration in CZ silicon by infrared absorption spectroscopy was examined. Noise level was suppressed down to 10-4 in unit of absorbance. Residual differential absorption between the sample and reference was removed by fitting the phonon absorption spectrum to the background absorption spectrum. The effect of narrowing of absorption spectral range was examined. As a result, it was possible to measure the differential carbon concentration down to about 1×1014/cm3. Measurement of commercial wafer was also established.

• Periodical: Solid State Phenomena (Volumes 108-109)
• Pages: 621-626
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.108-109.621
• Online since: December 2005
• Authors: N. Inoue, M. Nakatsu
• Keywords: Carbon, Infrared Absorption, Silicon

References

[1] Standard test method for substitutional atomic carbon content of silicon by infrared absorption, JEITA EM-3503 (JEITA 2002), also in ASTM F 1391 and DIN50438/2.

[2] M. Nakatsu and N. Inoue, Proc. High Purity Silicon (Electrochemical Society, 2004).

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