EBIC Study of Electrical Activity of Stacking Faults in Multicrystalline Sheet Silicon

Jinggang Lu; George A. Rozgonyi; James Rand; Ralf Jonczyk

doi:10.4028/www.scientific.net/SSP.108-109.627

Paper Titles

Potential and Limitations of Electron Holography in Silicon Research
p.603

Annealing Behaviour of New Nitrogen Infrared Absorption Peaks in CZ Silicon
p.609

Atomic Environment of Positrons Annihilating in HT Cz-Si Crystal
p.615

Infrared Absorption Measurement of Carbon Concentration down to 1x10¹⁴/cm³ in CZ Silicon
p.621

EBIC Study of Electrical Activity of Stacking Faults in Multicrystalline Sheet Silicon
p.627

The Build-Up of Strain Fields in Czochralski-Si Observed in Real Time by High Energy X-Ray Diffraction
p.631

In-Line Monitor Introduction to Prevent Metallic Contamination in Wet Bench
p.637

Measurement of Copper in p-Type Silicon Using Charge-Carrier Lifetime Methods
p.643

The Employment of Cathodoluminescent Method for Characterization of Silicon Oxide - Silicon Interface
p.649

HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109EBIC Study of Electrical Activity of Stacking...

EBIC Study of Electrical Activity of Stacking Faults in Multicrystalline Sheet Silicon

Abstract:

The electrical activity of stacking faults (SFs) in multicrystalline sheet silicon has been examined by correlating EBIC(electron beam induced current), preferential defect etching, and microwave photo-conductance decay (PCD) lifetime measurements. Following a three hour 1060 0C annealing the interstitial oxygen concentration decreased from 14 to 4.5 x 1017 cm-3, during which time a high density of SFs were generated in the center of individual large grains. Subsequent EBIC contrast variation within individual large grains was correlated with the local SF density revealed by preferential etching. In addition, a more quantitative intra-grain lifetime was obtained from high spatial resolution PCD measurements. It was found that an SF density of 1 to 2 x 106 cm-2 produces a lifetime limitation in sheet silicon which corresponds to a recombination lifetime of ~2 µs.

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology XI

View Preview

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

627-630

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.627

Citation:

Cite this paper

Online since:

December 2005

Authors:

Jinggang Lu, George A. Rozgonyi, James Rand, Ralf Jonczyk

Keywords:

EBIC, Oxygen Precipitation, Silicon, Stacking Fault

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] B. Shen, X. Y. Zhang, K. Yang, P. Chen, R. Zhang, Y. Shi, Y. D. Zheng, T. Sekiguchi, and K. Sumino, Appl. Phys. Lett. 70 (14) (1997) 1876.

Google Scholar

[2] T. Ono, T. Sasaki, H. Kirk, and G. Rozgonyi, Solid State Phenomena 78-79 (2001) 237.

Google Scholar

[3] T. Sekiguchi, B. Shen, T. Watanabe, and K. Sumino, Materials Sci. Engi. B 42 (1996) 235.

Google Scholar

[4] L. Kimerling, H. Leamy, and J. Patel, Appl. Phys. Lett. 30(5) (1977) 217.

Google Scholar

[5] J. Kaniewski, M. Kaniewska, and A. R. Peaker, Appl. Phys. Lett. 60(3) (1992) 359.

Google Scholar

[6] W. Seifert, M. Kittler, and J. Vanhellemont, Materials Sci. Engi. B 42 (1996) 260.

Google Scholar

[7] B. Shen, T. Sekiguchi, J. Jablonski, and K. Sumino, J. Appl. Phys. 76 (8) (1994) 4540.

Google Scholar

[8] C. V. Fossati and S. Martinuzzi, Eur. Phys. J. Appl. Phys. 3 (1998) 123.

Google Scholar

[9] J. Lu, G. Rozgonyi, J. Rand, and R. Jonczyk, Appl. Phys. Lett. 85(7) (2004) 1178.

Google Scholar

[10] J. Lu, M. Wagener, G. Rozgonyi, J. Rand, and R. Jonczyk, J. Appl. Phys. 94 (2003) 140.

Google Scholar