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Defect Behaviour in Deuterated and Non-Deuterated n-Type Si
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Thermal Stability of Ti/Mo Schottky Contacts on p-Si and Defects Introduced in p-Si during Electron Beam Deposition of Ti/Mo
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EBIC and DLTS Study of Deformation Induced Defect Thermal Stability in n-Si
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Cobalt Contamination in Silicon
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Local Measurements of Diffusion Length and Chemical Character of Metal Clusters in Multicrystalline Silicon
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Improved Measurement of Carbon in Poly- and CZ Crystal Silicon by Means of Low Temperature FTIR
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HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109EBIC and DLTS Study of Deformation Induced Defect...

EBIC and DLTS Study of Deformation Induced Defect Thermal Stability in n-Si

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Gettering and Defect Engineering in Semiconductor Technology XI

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

567-570

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.567

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Online since:

December 2005

Authors:

Olga V. Feklisova, Eugene B. Yakimov

Keywords:

Annealing, Dislocation, DLTS, EBIC, Silicon

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© 2005 Trans Tech Publications Ltd. All Rights Reserved

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