DLTS Study on Deep Levels Formed in Plasma Hydrogenated and Subsequently Annealed Silicon

Abstract:

P-n junctions are created in p-type Czochralski silicon after a low temperature (270°C) hydrogen plasma exposure. This is attributed to the formation of hydrogen-related shallow donors. A deep level (E1) with an activation energy of about EC-0.12 eV is observed by DLTS measurement and assigned to a metastable state of the hydrogen-related shallow donors. At an annealing temperature of 340°C, the E1 centres disappear and oxygen thermal donors appear. The concentrations of the oxygen thermal donors are found typically to be 2-3 decades lower than that required for over-compensating the initial p-type doping and for contributing the excess free carriers.

• Periodical: Solid State Phenomena (Volumes 108-109)
• Pages: 547-552
• DOI: https://doi.org/10.4028/www.scientific.net/SSP.108-109.547
• Online since: December 2005
• Authors: Yue Long Huang, Eddy Simoen, Cor Claeys, Reinhart Job, Yue Ma, Wolfgang Düngen, Wolfgang R. Fahrner, J. Versluys, Paul Clauws
• Keywords: C-V, Czochralski Silicon, DLTS, Hydrogen Plasma, Hydrogen-Related Shallow Donors, Thermal Donor

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