DLTS Study on Deep Levels Formed in Plasma Hydrogenated and Subsequently Annealed Silicon

Abstract:

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P-n junctions are created in p-type Czochralski silicon after a low temperature (270°C) hydrogen plasma exposure. This is attributed to the formation of hydrogen-related shallow donors. A deep level (E1) with an activation energy of about EC-0.12 eV is observed by DLTS measurement and assigned to a metastable state of the hydrogen-related shallow donors. At an annealing temperature of 340°C, the E1 centres disappear and oxygen thermal donors appear. The concentrations of the oxygen thermal donors are found typically to be 2-3 decades lower than that required for over-compensating the initial p-type doping and for contributing the excess free carriers.

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

547-552

DOI:

10.4028/www.scientific.net/SSP.108-109.547

Citation:

Y. L. Huang et al., "DLTS Study on Deep Levels Formed in Plasma Hydrogenated and Subsequently Annealed Silicon", Solid State Phenomena, Vols. 108-109, pp. 547-552, 2005

Online since:

December 2005

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Price:

$35.00

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