Rare Earth Ion Implantation for Silicon Based Light Emission
Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were formed in the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). Efficient electroluminescence was obtained for the wavelength range from UV to infrared with a transparent top electrode made of indium-tin oxide. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies distinctly above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Finally, application aspects to the field of biosensing will be shown.
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
W. Skorupa et al., "Rare Earth Ion Implantation for Silicon Based Light Emission", Solid State Phenomena, Vols. 108-109, pp. 755-760, 2005