Rare Earth Ion Implantation for Silicon Based Light Emission

Wolfgang Skorupa; J.M. Sun; S. Prucnal; L. Rebohle; T. Gebel; A. Nazarov; I.N. Osiyuk; M. Helm

doi:10.4028/www.scientific.net/SSP.108-109.755

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Rare Earth Ion Implantation for Silicon Based Light Emission
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HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Rare Earth Ion Implantation for Silicon Based...

Rare Earth Ion Implantation for Silicon Based Light Emission

Abstract:

Using ion implantation different rare earth luminescent centers (Gd3+, Tb3+, Eu3+, Ce3+, Tm3+, Er3+) were formed in the silicon dioxide layer of a purpose-designed Metal Oxide Silicon (MOS) capacitor with advanced electrical performance, further called a MOS-light emitting device (MOSLED). Efficient electroluminescence was obtained for the wavelength range from UV to infrared with a transparent top electrode made of indium-tin oxide. Top values of the efficiency of 0.3 % corresponding to external quantum efficiencies distinctly above the percent range were reached. The electrical properties of these devices such as current-voltage and charge trapping characteristics, were also evaluated. Finally, application aspects to the field of biosensing will be shown.

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

755-760

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.755

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Online since:

December 2005

Authors:

Wolfgang Skorupa, J.M. Sun, S. Prucnal, L. Rebohle, T. Gebel, A. Nazarov, I.N. Osiyuk, M. Helm

Keywords:

Biosensing, Electroluminescence, Rare Earth Iron Implantation, Silicon-Based Light Emission

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References

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