Modification of Silicon Oxide by High Energy Electron Beam

Abstract:

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During interaction between thin film SiO2 and electron beam with high power density, amorphous silicon dioxide modifies. Silicon nanoclusters are formed in radiated area. Result of this interaction is formation of Si/SiO2 nanocomposite. We studied modified SiO2 by TEM, microdiffraction and cathodoluminescence.

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

729-734

DOI:

10.4028/www.scientific.net/SSP.108-109.729

Citation:

E.V. Kolesnikova et al., "Modification of Silicon Oxide by High Energy Electron Beam", Solid State Phenomena, Vols. 108-109, pp. 729-734, 2005

Online since:

December 2005

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Price:

$35.00

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