Helium Implantation Damage in SiC

Abstract:

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Single crystals SiC were implanted with 50 keV helium ions at room temperature and fluences in the range 1x1016 -1x1017 cm-2. The helium implantation induced swelling was studied through the measurement of the step height. The damage was studied by using X-ray diffraction measurements and the transmission electron microscopy observations. Degradation of mechanical properties is found after helium implantation.

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

709-712

DOI:

10.4028/www.scientific.net/SSP.108-109.709

Citation:

S. Leclerc et al., "Helium Implantation Damage in SiC", Solid State Phenomena, Vols. 108-109, pp. 709-712, 2005

Online since:

December 2005

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Price:

$35.00

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