Helium Implantation Damage in SiC
Single crystals SiC were implanted with 50 keV helium ions at room temperature and fluences in the range 1x1016 -1x1017 cm-2. The helium implantation induced swelling was studied through the measurement of the step height. The damage was studied by using X-ray diffraction measurements and the transmission electron microscopy observations. Degradation of mechanical properties is found after helium implantation.
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
S. Leclerc et al., "Helium Implantation Damage in SiC", Solid State Phenomena, Vols. 108-109, pp. 709-712, 2005