Helium Implantation Damage in SiC

Stephanie Leclerc; Marie France Beaufort; Valerie Audurier; Alain Déclemy; Jean François Barbot

doi:10.4028/www.scientific.net/SSP.108-109.709

Paper Titles

Recent Progress in Understanding of Lattice Defects in Czochralski-Grown Germanium: Catching-up with Silicon
p.683

Defect Removal, Dopant Diffusion and Activation Issues in Ion-Implanted Shallow Junctions Fabricated in Crystalline Germanium Substrates
p.691

Theoretical Investigations of the Energy Levels of Defects in Germanium
p.697

Some Recent Advances on the n-Type Doping of Diamond
p.703

Helium Implantation Damage in SiC
p.709

6H(n⁺)/3C(n)/6H(p⁺) - SiC Structures Grown by Sublimation Epitaxy
p.713

Current Transport by Defects in Pr₂O₃ High K Films
p.717

Pulsed Laser Deposition of Hafnium Oxide on Silicon
p.723

Modification of Silicon Oxide by High Energy Electron Beam
p.729

HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Helium Implantation Damage in SiC

Helium Implantation Damage in SiC

Abstract:

Single crystals SiC were implanted with 50 keV helium ions at room temperature and fluences in the range 1x1016 -1x1017 cm-2. The helium implantation induced swelling was studied through the measurement of the step height. The damage was studied by using X-ray diffraction measurements and the transmission electron microscopy observations. Degradation of mechanical properties is found after helium implantation.