Recent Progress in Understanding of Lattice Defects in Czochralski-Grown Germanium: Catching-up with Silicon
Recent progress is presented in the understanding of grown-in defects in Czochralskigrown germanium crystals with special emphasis on intrinsic point defects, on vacancy clustering and on interstitial oxygen. Whenever useful the results are compared with those obtained for silicon.
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
J. Vanhellemont et al., "Recent Progress in Understanding of Lattice Defects in Czochralski-Grown Germanium: Catching-up with Silicon ", Solid State Phenomena, Vols. 108-109, pp. 683-690, 2005