Paper Titles

Measurement of Oi in Heavily Boron Doped Chemical Thinned Silicon by Low Temperature FTIR Spectroscopy
p.655

Silicon Carbide: Defects and Devices
p.663

Ab Initio Investigations of Threshold Displacement Energies and Stability of Associated Defects in Cubic Silicon Carbide
p.671

Electrical Characterizations of Hydrogenated 4H-SiC Epitaxial Samples
p.677

Recent Progress in Understanding of Lattice Defects in Czochralski-Grown Germanium: Catching-up with Silicon
p.683

Defect Removal, Dopant Diffusion and Activation Issues in Ion-Implanted Shallow Junctions Fabricated in Crystalline Germanium Substrates
p.691

Theoretical Investigations of the Energy Levels of Defects in Germanium
p.697

Some Recent Advances on the n-Type Doping of Diamond
p.703

Helium Implantation Damage in SiC
p.709

HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Recent Progress in Understanding of Lattice...

Recent Progress in Understanding of Lattice Defects in Czochralski-Grown Germanium: Catching-up with Silicon

Article Preview

Abstract:

Recent progress is presented in the understanding of grown-in defects in Czochralskigrown germanium crystals with special emphasis on intrinsic point defects, on vacancy clustering and on interstitial oxygen. Whenever useful the results are compared with those obtained for silicon.

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology XI

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

683-690

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.683

Citation:

Cite this paper

Online since:

December 2005

Authors:

Jan Vanhellemont, Steven Hens, J. Lauwaert, Olivier De Gryse, Piet Vanmeerbeek, Dirk Poelman, P. Śpiewak, Igor Romandic, Antoon Theuwis, Paul Clauws

Keywords:

FT-IR, Germanium, Oxygen, Precipitation, Silicon, Simulation, Vacancy, Void

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2005 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

[1] http: /substrates. umicore. com.

[2] J. Vanhellemont, O. De Gryse, S. Hens, P. Vanmeerbeek, D. Poelman, P. Clauws, E. Simoen, C. Claeys, I. Romandic, A. Theuwis, G. Raskin, H. Vercammen and P. Mijlemans: Defect and Diffusion Forum 230-232 (2004), p.149.

DOI: 10.4028/www.scientific.net/ddf.230-232.149

[3] A. Seeger and K.P. Chik: phys. stat. sol. 19 (1968), p.455.

[4] A. Giese, N.A. Stolwijk and H. Bracht: Appl. Phys. Lett. 77 (2000), p.642.

[5] S. Mayburg: Phys. Rev. 95 (1954), p.38.

[6] A.G. Tweet: Phys. Rev. 106 (1957), p.221.

[7] T.V. Mashovets: Sov. Phys. Semicond. 16 (1982), p.1.

[8] N. Bernstein, M. J. Mehl, D. A. Papaconstantopoulos: Phys. Rev. B 66 (2002), p.075212.

[9] Antônio J.R. da Silva, A. Janotti, A. Fazzio, R.J. Baierle and R. Motta: Phys. Rev. B 62 (2000), p.9903.

[10] F.H. Stillinger and T.A. Weber: Phys. Rev. B 31 (1982), p.5262.

[11] H.R. Schober: Phys. Rev. B 39 (1989), p.13013.

[12] T. Sinno: Ph.D. Thesis, Massachusetts Institute of Technology, Cambridge, MA, (1998).

[13] A. Fazzio, A. Janotti, Antônio J.R. da Silva and R. Motta: Phys. Rev. B 61 (2000), p. R2401.

[14] W. Frank, N.A. Stolwijk: Mater. Sci. Forum 15-18 (1987), p.369.

[15] H.D. Fuchs, W. Walukiewicz, E.E. Haller, W. Dondl, R. Schorer, G. Abstreiter, A.I. Rudnev, A.V. Tikhomirov, V. I Ozhogin: Phys. Rev. B 51 (1995), pp.16-817.

[16] F. Bailly: in Lattice Defects in Semiconductors (ed. by R.R. Hasiguti), University of Tokyo Press, Tokyo (1968), p.231.

[17] R. A. Swalin: J. Phys. Chem. Solids 18 (1961), p.290.

[18] K.H. Bennemann: Phys. Rev. 137 (1965), p. A1497.

[19] A. Scholz and A. Seeger: Phys. Status Solidi 3 (1963), p.1480.

[20] T. Soma, M. Saeki, and A. Morita: J. Phys. Soc. Jpn. 35 (1973), p.146.

[21] J.C. Philips and J.A. Van Vechten: Phys. Rev. Lett. 30 (1973), p.220.

[22] R.R. Hasiguti: J. Phys. Soc. Jpn. 21 (1966), p. (1927).

[23] V.A. Panteleev: Fiz. Tverd. Tela (Leningrad) 19 (1977), p.2801 [in Russian].

[24] V.I. Okulich: Author's Abstract of Thesis for Candidate's Degree, State University, Gorki (1964) [in Russian].

[25] V.V. Voronkov and R. Falster: Journ Electrochem. Soc. 149 (2002), p. G167.

[26] J. Vanhellemont: J. Appl. Phys. 78 (1995), p.4297.

[27] J. Vanhellemont: Appl. Phys. Lett. 69 (1996), p.4008.

[28] T. Sinno, E. Dornberger, W. von Ammon, R.A. Brown and F. Dupret: Material Science and Engineering 28 (2000), p.149.

[29] S. Hens, J. Vanhellemont, D. Poelman, P. Clauws, I. Romandic, F. Holsteyns and J. Van Steenbergen: submitted for publication in Applied Physics Letters.

DOI: 10.1063/1.2009830

[30] W. Kaiser and C.D. Thurmond: J. Appl. Phys. 32 (1961), p.115.

[31] J.W. Corbett, R.S. Mc Donald and D.G. Watkins: J. Phys. Chem. Solids 25 (1964), p.873.

[32] P. Clauws: Mater. Sci. Eng. B 36 (1996), p.213.

[33] P. Vanmeerbeek: PhD thesis, Ghent University (2004).

[34] M. De Bock: Master thesis, Ghent University (2002).

[35] P. Vanmeerbeek, P. Clauws and W. Mondelaers: Physica B 308-310 (2001), p.517.

[36] O. De Gryse, P. Clauws, J. Van Landuyt, O. Lebedev, C. Claeys, E. Simoen and J. Vanhellemont: J. Appl. Phys. 91 (2002), p.2493.

DOI: 10.1063/1.1429800