Recent Progress in Understanding of Lattice Defects in Czochralski-Grown Germanium: Catching-up with Silicon

Abstract:

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Recent progress is presented in the understanding of grown-in defects in Czochralskigrown germanium crystals with special emphasis on intrinsic point defects, on vacancy clustering and on interstitial oxygen. Whenever useful the results are compared with those obtained for silicon.

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

683-690

DOI:

10.4028/www.scientific.net/SSP.108-109.683

Citation:

J. Vanhellemont et al., "Recent Progress in Understanding of Lattice Defects in Czochralski-Grown Germanium: Catching-up with Silicon ", Solid State Phenomena, Vols. 108-109, pp. 683-690, 2005

Online since:

December 2005

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Price:

$35.00

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