Structural Characterization of Epitaxial Si / Pr2O3 / Si(111) Heterostructures

P. Zaumseil; T. Schroeder; G. Weidner

doi:10.4028/www.scientific.net/SSP.108-109.741

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HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Structural Characterization of Epitaxial Si /...

Structural Characterization of Epitaxial Si / Pr₂O₃ / Si(111) Heterostructures

Abstract:

The use of heteroepitaxial Si / Pr2O3 / Si(111) systems as semiconductor-insulatorsemiconductor (SIS) stacks in future applications requires a detailed structural characterization. We used X-ray reflectivity (XRR) to control layer thickness and interface roughness, standard X-ray diffraction (XRD) to analyze the Pr2O3 phase, orientation and crystal perfection, and grazing incidence XRD to study the thin epitaxial Si top layer. Transmission electron microscopy (TEM) was used to prove the results by direct imaging on a microscopic scale. Pr2O3 grows epitaxially in its hexagonal phase and (0001) orientation on Si(111) substrates. An epitaxial Si overgrowth in (111) orientation and good perfection is possible, but such Si layers exhibit two stacking twins, one with the same in-plane orientation as the substrate and one rotated by 180° around the Si [111] direction.

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Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

741-748

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.741

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Online since:

December 2005

Authors:

P. Zaumseil, T. Schroeder, G. Weidner

Keywords:

Grazing Incidence X-Ray Diffractometry (GI-XRD), Heteroepitaxy, High-k Material, SIS Structure, TEM, X-Ray Diffraction (XRD)

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