Defect Formation in MBE Er-Doped Si Light-Emitting Structures

V.I. Vdovin; N.A. Sobolev; D.V. Denisov; Elena I. Shek

doi:10.4028/www.scientific.net/SSP.108-109.779

Paper Titles

Silicon Based Light Emitters for On-Chip Optical Interconnects
p.749

Rare Earth Ion Implantation for Silicon Based Light Emission
p.755

SiGe Light-Emitting Diodes and Their Characteristics in the Region of Band-to-Band Transitions
p.761

Fine Structure of Dislocation Related PL Bands D1 and D2 in Silicon
p.767

Defect Formation in MBE Er-Doped Si Light-Emitting Structures
p.779

Atomistic Nanodevice Simulation
p.787

Interfacing Biology with Electronic Devices
p.789

Thin SiGe Relaxed Buffer for Strain Adjustment
p.797

HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Defect Formation in MBE Er-Doped Si Light-Emitting...

Defect Formation in MBE Er-Doped Si Light-Emitting Structures

Abstract:

Structural defects in Si:Er layers grown by molecular beam epitaxy have been studied by transmission electron microscopy. Two kinds of second phase precipitates are the main defects in the layers with Er concentration ≥ 2х1019 cm-3: ball-shaped precipitates (4-25 nm) of metallic Er localized at the layer-substrate interface and platelet precipitates of ErSi2 extending through the whole layer. We studied the effect of Er concentration (8х1018 - 4х1019 cm-3) and growth temperature (400 - 700°C) on the defect generation. The peculiarities of defect generation in MBE Si:Er layers implanted with B+ ions were also studied.

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology XI

View Preview

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Pages:

779-786

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.108-109.779

Citation:

Cite this paper

Online since:

December 2005

Authors:

V.I. Vdovin, N.A. Sobolev, D.V. Denisov, Elena I. Shek

Keywords:

Erbium, Light Emitting Devices, Molecular Beam Epitaxy, Silicon

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

Citation:

References

[1] R. Serna, J.H. Shin, M. Lohmeier, E. Vlieg, A. Polman, P.F.A. Alkemade: J. Appl. Phys. Vol. 79 (1996), p.2658.

Google Scholar

[2] J. Stimmer, A. Reittinger, J.F. Nutzel, G. Absreiter, H.P. Holzbrechter, Ch. Buchal: Appl. Phys. Lett. Vol. 68 (1996), p.3290.

Google Scholar

[3] W. -X. Ni, K.B. Joelsson, C. -X. Du, I.A. Buyanova, G. Pozina, W.M. Chen, G.V. Hansson, B. Monemar, J. Cardenas, B.G. Svensson: Appl. Phys. Lett. Vol. 70 (1997), p.3383.

DOI: 10.1063/1.119178

Google Scholar

[4] M. Markmann, E. Neufeld, A. Sticht, K. Brunner, G. Abstreiter: Appl. Phys. Lett. Vol. 75 (1999), p.2584.

DOI: 10.1063/1.125085

Google Scholar

[5] C. -X. Du, W. -X. Ni, K.B. Joelsson, F. Duteil, G.V. Hansson: Optical Materials Vol. 14 (2000), p.259.

Google Scholar

[6] H. Efeoglu, J.H. Evans, Т.Е. Jackman, B. Hamilton, D.C. Honghton, J.M. Langer, A.R. Peaker, D. Perovic, I. Poole, N. Ravel, P. Hemment, C.W. Chen: Semicond. Sci. Technol. Vol. 8 (1993), p.236.

DOI: 10.1088/0268-1242/8/2/015

Google Scholar

[7] N.A. Sobolev, D.V. Denisov, A.M. Emel`yanov, E.I. Shek, B. Ya. Ber, A.P. Kovarski, V.I. Sakharov, I.T. Serenkov, V.M. Ustinov, G.E. Cirlin and T.V. Kotereva: Phys. of Solid State Vol. 47 (2005), p.113.

Google Scholar

[8] V.I. Vdovin, P. Verner, N.D. Zakharov, D.V. Devinsov, N.A. Sobolev, Phys. of Solid State (2005), (in press).

Google Scholar

[9] N.A. Sobolev, A.M. Emel'yanov, E.I. Shek and V.I. Vdovin: Solid State Phenomena. Vol. 95- 96 (2004), p.283.

Google Scholar