Defect Formation in MBE Er-Doped Si Light-Emitting Structures
Structural defects in Si:Er layers grown by molecular beam epitaxy have been studied by transmission electron microscopy. Two kinds of second phase precipitates are the main defects in the layers with Er concentration ≥ 2х1019 cm-3: ball-shaped precipitates (4-25 nm) of metallic Er localized at the layer-substrate interface and platelet precipitates of ErSi2 extending through the whole layer. We studied the effect of Er concentration (8х1018 - 4х1019 cm-3) and growth temperature (400 - 700°C) on the defect generation. The peculiarities of defect generation in MBE Si:Er layers implanted with B+ ions were also studied.
B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler
V.I. Vdovin et al., "Defect Formation in MBE Er-Doped Si Light-Emitting Structures ", Solid State Phenomena, Vols. 108-109, pp. 779-786, 2005