Atomistic Nanodevice Simulation

Michel Lannoo

doi:10.4028/www.scientific.net/SSP.108-109.787

Paper Titles

Silicon Based Light Emitters for On-Chip Optical Interconnects
p.749

Rare Earth Ion Implantation for Silicon Based Light Emission
p.755

SiGe Light-Emitting Diodes and Their Characteristics in the Region of Band-to-Band Transitions
p.761

Fine Structure of Dislocation Related PL Bands D1 and D2 in Silicon
p.767

Defect Formation in MBE Er-Doped Si Light-Emitting Structures
p.779

Atomistic Nanodevice Simulation
p.787

Interfacing Biology with Electronic Devices
p.789

Thin SiGe Relaxed Buffer for Strain Adjustment
p.797

HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Atomistic Nanodevice Simulation

Atomistic Nanodevice Simulation

Abstract:

There now a large variety of methods exists for the elaboration of nanoobjects and nanodevices. At the same time the reduction in size together with the improvement of theoretical techniques and computational power should allow efficient quantitative simulation of these objects. Such predictive simulation is highly needed since it can serve as a useful guide to build new nanostructures with the desired properties. The aim of this talk is than to give an overview of what has already been achieved in this rapidly evolving field, what can be done at present and what is expected for the future. The focus will be mostly on semiconductor nanostructures and especially silicon.