Thin SiGe Relaxed Buffer for Strain Adjustment

Erich Kasper; Klara Lyutovich

doi:10.4028/www.scientific.net/SSP.108-109.797

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Thin SiGe Relaxed Buffer for Strain Adjustment
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HomeSolid State PhenomenaSolid State Phenomena Vols. 108-109Thin SiGe Relaxed Buffer for Strain Adjustment

Thin SiGe Relaxed Buffer for Strain Adjustment

Abstract:

Strain adjustment is obtained by virtual substrates which are composed of a silicon substrate and a strain relaxed buffer. The basics of strain relaxation are explained and applied to the covalent bonded Si/Ge system which shows a large regime of metastability. A solution to ultrathin strain relaxed buffers is given by the injection of point defects which nucleate to dislocation loops in the interface. Principle and injection mechanism are shown.

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Solid State Phenomena (Volumes 108-109)

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797-0

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https://doi.org/10.4028/www.scientific.net/SSP.108-109.797

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December 2005

Authors:

Erich Kasper, Klara Lyutovich

Keywords:

Misfit Dislocation, Point Defect, Strain Relaxation, Virtual Substrate

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