Thin SiGe Relaxed Buffer for Strain Adjustment

Abstract:

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Strain adjustment is obtained by virtual substrates which are composed of a silicon substrate and a strain relaxed buffer. The basics of strain relaxation are explained and applied to the covalent bonded Si/Ge system which shows a large regime of metastability. A solution to ultrathin strain relaxed buffers is given by the injection of point defects which nucleate to dislocation loops in the interface. Principle and injection mechanism are shown.

Info:

Periodical:

Solid State Phenomena (Volumes 108-109)

Edited by:

B. Pichaud, A. Claverie, D. Alquier, H. Richter and M. Kittler

Pages:

797-0

DOI:

10.4028/www.scientific.net/SSP.108-109.797

Citation:

E. Kasper and K. Lyutovich, "Thin SiGe Relaxed Buffer for Strain Adjustment", Solid State Phenomena, Vols. 108-109, pp. 797-0, 2005

Online since:

December 2005

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Price:

$35.00

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